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4Q Triac. BT136-600E Datasheet

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4Q Triac. BT136-600E Datasheet






BT136-600E Triac. Datasheet pdf. Equivalent




BT136-600E Triac. Datasheet pdf. Equivalent





Part

BT136-600E

Description

4Q Triac



Feature


BT136-600E 4Q Triac Rev.01 - 14 March 20 18 Product data sheet 1. General desc ription Planar passivated sensitive gat e four quadrant triac in a SOT78 (TO-22 0AB) plastic package intended for use i n general purpose bidirectional switchi ng and phase control applications. This sensitive gate "series E" triac is int ended to be interfaced directly to micr ocontrollers, logi.
Manufacture

WeEn

Datasheet
Download BT136-600E Datasheet


WeEn BT136-600E

BT136-600E; c integrated circuits and other low powe r gate trigger circuits. 2. Features a nd benefits • High blocking voltage c apability • Low holding current for l ow current loads and lowest EMI at comm utation • Planar passivated for volta ge ruggedness and reliability • Trigg ering in all four quadrants • Direct triggering from low power drivers and l ogic ICs • Sensitive gate 3.


WeEn BT136-600E

. Applications • General purpose motor control • General purpose switching 4. Quick reference data Table 1. Quic k reference data Symbol Parameter Abso lute maximum rating VDRM repetitive p eak off-state voltage IT(RMS) RMS on- state current ITSM non-repetitive pea k on- state current Symbol Parameter Static characteristics IGT gate trig ger current IH holdi.


WeEn BT136-600E

ng current Conditions full sine wave; T mb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 full sine wave; Tj(init) = 25 °C; tp = 20 ms; Fig. 4; Fig. 5; Fig. 3 Conditio ns VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T 2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; I T = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 VD = 12 V; Tj .

Part

BT136-600E

Description

4Q Triac



Feature


BT136-600E 4Q Triac Rev.01 - 14 March 20 18 Product data sheet 1. General desc ription Planar passivated sensitive gat e four quadrant triac in a SOT78 (TO-22 0AB) plastic package intended for use i n general purpose bidirectional switchi ng and phase control applications. This sensitive gate "series E" triac is int ended to be interfaced directly to micr ocontrollers, logi.
Manufacture

WeEn

Datasheet
Download BT136-600E Datasheet




 BT136-600E
BT136-600E
4Q Triac
Rev.01 - 14 March 2018
Product data sheet
1. General description
Planar passivated sensitive gate four quadrant triac in a SOT78 (TO-220AB) plastic package
intended for use in general purpose bidirectional switching and phase control applications. This
sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic
integrated circuits and other low power gate trigger circuits.
2. Features and benefits
High blocking voltage capability
Low holding current for low current loads and lowest EMI at commutation
Planar passivated for voltage ruggedness and reliability
Triggering in all four quadrants
Direct triggering from low power drivers and logic ICs
Sensitive gate
3. Applications
General purpose motor control
General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Absolute maximum rating
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
ITSM
non-repetitive peak on-
state current
Symbol Parameter
Static characteristics
IGT
gate trigger current
IH
holding current
Conditions
full sine wave; Tmb ≤ 107 °C;
Fig. 1; Fig. 2; Fig. 3
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig. 4; Fig. 5; Fig. 3
Conditions
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+;
Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
Values
Unit
600
V
4
A
25
A
Min Typ Max Unit
-
2.5 10
mA
-
4
10
mA
-
5
10
mA
-
11
25
mA
-
2.2 15
mA




 BT136-600E
WeEn Semiconductors
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
T1
main terminal 1
Simplified outline
mb
2
T2
main terminal 2
3
G
gate
mb
T2
mounting base; main terminal 2
BT136-600E
4Q Triac
Graphic symbol
T2
T1
G
sym051
123
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
Description
BT136-600E
TO-220AB plastic single-ended package; heatsink mounted;
1 mounting hole; 3-lead TO-220AB
7. Marking
Table 4. Marking codes
Type number
BT136-600E
Marking codes
BT136-600E
Version
SOT78
BT136-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
2 / 13




 BT136-600E
WeEn Semiconductors
BT136-600E
4Q Triac
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDRM
repetitive peak off-state
voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 107 °C; Fig 1; Fig 2; Fig 3
ITSM
I2t
dIT/dt
IGM
PGM
PG(AV)
Tstg
Tj
non-repetitive peak on-
state current
I2t for fusing
rate of rise of on-state
current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
full sine wave; Tj(init) = 25 °C;
tp = 20 ms; Fig 4; Fig 5; Fig 3
full sine wave; Tj(init) = 25 °C;
tp = 16.7 ms; Fig 4; Fig 5;
tp = 10 ms; SIN
IG = 20 mA; T2+ G+
IG = 20 mA; T2+ G-
IG = 20 mA; T2- G-
IG = 50 mA; T2- G+
over any 20 ms period
Values
600
4
25
27
3.1
50
50
50
10
2
5
0.5
-40 to 150
125
Unit
V
A
A
A
A2s
A/μs
A/μs
A/μs
A/μs
A
W
W
°C
°C
BT136-600E
Product data sheet
All information provided in this document is subject to legal disclaimers.
14 March 2018
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
3 / 13






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