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IGBT. MMG200D170B Datasheet

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IGBT. MMG200D170B Datasheet






MMG200D170B IGBT. Datasheet pdf. Equivalent




MMG200D170B IGBT. Datasheet pdf. Equivalent





Part

MMG200D170B

Description

IGBT



Feature


March 2016 PRODUCT FEATURES □ High sho rt circuit capability,self limiting sho rt circuit current □ IGBT CHIP(Highly rugged SPT+ design) □ VCE(sat) with positive temperature coefficient □ Ul tra Low Loss,High Ruggedness □ Free w heeling diodes with fast and soft rever se recovery Preliminary MMG200D170B 1 700V 200A IGBT Module RoHS Compliant A PPLICATIONS □ AC motor contr.
Manufacture

MacMic

Datasheet
Download MMG200D170B Datasheet


MacMic MMG200D170B

MMG200D170B; ol □ Motion/servo control □ Inverter and power supplies □ Photovoltaic/Fu el cell IGBT-inverter ABSOLUTE MAXIMU M RATINGS(T C =25°C unless otherwise s pecified) Symbol Parameter/Test Condi tions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃,TJma x=175℃ TC=100℃,TJmax=175℃ ICM R epetitive Peak Collector Current t.


MacMic MMG200D170B

p=1ms Ptot Power Dissipation Per IGBT TJmax=175℃ Values Unit 1700 V ±2 0 300 200 A 400 1360 W Diode-inv erter ABSOLUTE MAXIMUM RATINGS (T C =2 5°C unless otherwise specified) Symbo l Parameter/Test Conditions VRRM Repe titive Reverse Voltage TJ=25℃ IF(AV ) Average Forward Current IFRM Repet itive Peak Forward Current tp=1ms I2t TJ =150℃, t=10ms, VR=0.


MacMic MMG200D170B

V Values Unit 1700 V 200 A 400 TBD A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, Ne w District, Changzhou City, Jiangsu Pro vince, P. R .of China 1 Tel.:+86-51 9-85163708 Fax:+86-519-85162291 Post Code:213022 Website :www.macmicst.c om MMG200D170B IGBT-inverter ELECTRIC AL CHARACTERISTICS (T C =25°C unless o therwise specified) Symbol .

Part

MMG200D170B

Description

IGBT



Feature


March 2016 PRODUCT FEATURES □ High sho rt circuit capability,self limiting sho rt circuit current □ IGBT CHIP(Highly rugged SPT+ design) □ VCE(sat) with positive temperature coefficient □ Ul tra Low Loss,High Ruggedness □ Free w heeling diodes with fast and soft rever se recovery Preliminary MMG200D170B 1 700V 200A IGBT Module RoHS Compliant A PPLICATIONS □ AC motor contr.
Manufacture

MacMic

Datasheet
Download MMG200D170B Datasheet




 MMG200D170B
March 2016
PRODUCT FEATURES
High short circuit capability,self limiting short circuit current
IGBT CHIP(Highly rugged SPT+ design)
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
Preliminary
MMG200D170B
1700V 200A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
Collector Emitter Voltage
TJ=25
VGES
Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=100,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TJmax=175
Values
Unit
1700
V
±20
300
200
A
400
1360
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =150, t=10ms, VR=0V
Values
Unit
1700
V
200
A
400
TBD
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Website www.macmicst.com




 MMG200D170B
MMG200D170B
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Qg
Gate Charge
VCE=900V, IC=200A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=900V,IC=200A
RG =6,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
td(off)
Turn off Delay Time
tf
Fall Time
VCC=900V,IC=200A
RG =6,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=200A
RG =6,
VGE=±15V,
Inductive Load
TJ=125
TJ=150
TJ=25
TJ=125
ISC
Short Circuit Current
TJ=150
tpsc10µS , VGE=15V
TJ=150,VCC=1300V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.4
-500
Typ.
6.2
2.5
3.1
1.54
13.5
0.46
240
260
120
130
450
550
160
180
48
63
70
38
58
64
620
Max. Unit
7.4
2.75 V
1
mA
10 mA
500 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.11 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
IF=200A , VGE=0V, TJ=25
IF=200A , VGE=0V, TJ=150
IF=200A , VR=900V
dIF/dt=-2100A/μs
TJ =150
Erec
Reverse Recovery Energy
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.25
V
1.9
880
ns
220
A
106
µC
65
mJ
0.2 K /W
2




 MMG200D170B
MMG200D170B
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
4000
V
225
3~5
Nm
2.5~5
Nm
300
g
Figure 1. Circuit Diagram
Dimensions in (mm)
Figure 2. Package Outline
3






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