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IGBT. MMG200D170B6TC Datasheet

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IGBT. MMG200D170B6TC Datasheet






MMG200D170B6TC IGBT. Datasheet pdf. Equivalent




MMG200D170B6TC IGBT. Datasheet pdf. Equivalent





Part

MMG200D170B6TC

Description

IGBT



Feature


June 2019 PRODUCT FEATURES □ IGBT CHIP (1700V Trench+Field Stop technology) Low turn-off losses, short tail curre nt □ VCE(sat) with positive temperatu re coefficient □ Ultra Low Loss,High Ruggedness □ Free wheeling diodes wit h fast and soft reverse recovery MMG20 0D170B6TC Version 01 1700V 200A IGBT Module RoHS Compliant APPLICATIONS □ AC motor control □ Motion/ser.
Manufacture

MacMic

Datasheet
Download MMG200D170B6TC Datasheet


MacMic MMG200D170B6TC

MMG200D170B6TC; vo control □ Inverter and power suppli es □ Photovoltaic/Fuel cell IGBT-inv erter ABSOLUTE MAXIMUM RATINGS(T C =25 °C unless otherwise specified) Symbol Parameter/Test Conditions VCES Colle ctor Emitter Voltage TJ=25℃ VGES Ga te Emitter Voltage IC DC Collector Cu rrent TC=25℃,TJmax=175℃ TC=95℃,T Jmax=175℃ ICM Repetitive Peak Colle ctor Current tp=1ms Ptot Power.


MacMic MMG200D170B6TC

Dissipation Per IGBT TC=25℃,TJmax=17 5℃ Values Unit 1700 V ±20 300 2 00 A 400 1500 W Diode-inverter AB SOLUTE MAXIMUM RATINGS (T C =25°C unle ss otherwise specified) Symbol Parame ter/Test Conditions VRRM Repetitive Re verse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ =125 , t=10ms, VR=0V Values Un.


MacMic MMG200D170B6TC

it 1700 V 200 A 400 6500 A2S MacMi c Science & Technology Co., Ltd. Add #18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 F ax:+86-519-85162291 Post Code:21302 2 Website:www.macmicst.com MMG200D17 0B6TC MMG200D170B6TC IGBT-inverter EL ECTRICAL CHARACTERISTICS (T C =25°C un less otherwise specified) Sy.

Part

MMG200D170B6TC

Description

IGBT



Feature


June 2019 PRODUCT FEATURES □ IGBT CHIP (1700V Trench+Field Stop technology) Low turn-off losses, short tail curre nt □ VCE(sat) with positive temperatu re coefficient □ Ultra Low Loss,High Ruggedness □ Free wheeling diodes wit h fast and soft reverse recovery MMG20 0D170B6TC Version 01 1700V 200A IGBT Module RoHS Compliant APPLICATIONS □ AC motor control □ Motion/ser.
Manufacture

MacMic

Datasheet
Download MMG200D170B6TC Datasheet




 MMG200D170B6TC
June 2019
PRODUCT FEATURES
IGBT CHIP(1700V Trench+Field Stop technology)
Low turn-off losses, short tail current
VCE(sat) with positive temperature coefficient
Ultra Low Loss,High Ruggedness
Free wheeling diodes with fast and soft reverse recovery
MMG200D170B6TC
Version 01
1700V 200A IGBT Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
Photovoltaic/Fuel cell
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25,TJmax=175
TC=95,TJmax=175
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25,TJmax=175
Values
Unit
1700
V
±20
300
200
A
400
1500
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms
TJ =125, t=10ms, VR=0V
Values
Unit
1700
V
200
A
400
6500
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
MMG200D170B6TC




 MMG200D170B6TC
MMG200D170B6TC
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=8mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
IC=200A, VGE=15V, TJ=150
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=1700V, VGE=0V, TJ=25
VCE=1700V, VGE=0V, TJ=150
VCE=0V,VGE=±20V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=900V, IC=200A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=900V,IC=200A
RG =5.1Ω,
VGE=±15V,
Inductive Load
VCC=900V,IC=200A
RG =5.1Ω,
VGE=±15V,
Inductive Load
VCC=900V,IC=200A
RG =5.1Ω,
VGE=±15V,
Inductive Load
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=150
TJ=25
TJ=125
TJ=150
TJ=25
TJ=125
TJ=150
ISC
Short Circuit Current
tpsc10µS , VGE=15V
TJ=150,VCC=1000V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
5.0
-500
Typ.
6.0
2.2
2.5
2.6
3
1.6
19
610
160
180
130
140
600
700
200
300
111
140
150
34
52
56
720
Max. Unit
6.5
2.6
V
2
mA
20 mA
500 nA
Ω
µC
nF
pF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
mJ
mJ
A
0.1 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=200A , VGE=0V, TJ=25
VF
Forward Voltage
IF=200A , VGE=0V, TJ=125
IF=200A , VGE=0V, TJ=150
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=900V
dIF/dt=-1100A/μs
TJ =150
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.8
2.2
1.9
V
1.9
1380
ns
141
A
95
µC
40
mJ
0.16 K /W
2
MMG200D170B6TC




 MMG200D170B6TC
MMG200D170B6TC
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Max. Junction Temperature
Operating Temperature
Tstg
Storage Temperature
Visol
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
to heatsink
Torque
to terminal
RecommendedM6
RecommendedM6
Weight
Values
Unit
175
-40~150
-40~125
4000
V
225
3~5
Nm
2.5~5
Nm
300
g
400
25
300
150
200
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
200
Vge=9V
100
VGE=15V
0
0
1
2
3
4
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
3
100
TJ=150
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter
MMG200D170B6TC






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