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IGBT. MMG200W060X6EN Datasheet

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IGBT. MMG200W060X6EN Datasheet






MMG200W060X6EN IGBT. Datasheet pdf. Equivalent




MMG200W060X6EN IGBT. Datasheet pdf. Equivalent





Part

MMG200W060X6EN

Description

IGBT



Feature


February 2017 PRODUCT FEATURES □ IGBT3 Chip(Trench+Field Stop technology) □ High short circuit capability,self lim iting short circuit current □ Low sat uration voltage and positive temperatur e coefficient □ Fast switching and sh ort tail current □ Free wheeling diod es with fast and soft reverse recovery □ Industry standard package with insu lated copper base plate and so.
Manufacture

MacMic

Datasheet
Download MMG200W060X6EN Datasheet


MacMic MMG200W060X6EN

MMG200W060X6EN; ldering pins for PCB mounting □ Temper ature sense included MMG200W060X6EN V ersion 1 600V 200A Six-Pack Module RoH S Compliant APPLICATIONS □ AC motor control □ Motion/servo control □ In verter and power supplies IGBT-inverte r ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Pa rameter/Test Conditions VCES VGES Col lector Emitter Voltage Gate.


MacMic MMG200W060X6EN

Emitter Voltage TJ=25℃ IC DC Colle ctor Current ICM Repetitive Peak Coll ector Current TC=25℃, TJmax=175℃ T C=60℃, TJmax=175℃ tp=1ms Ptot Pow er Dissipation Per IGBT TC=25℃, TJma x=175℃ Values Unit 600 V ±20 240 200 A 400 600 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C un less otherwise specified) Symbol Para meter/Test Conditions VRRM Repeti.


MacMic MMG200W060X6EN

tive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetiti ve Peak Forward Current tp=1ms I2t T J =125℃, t=10ms, VR=0V Values Unit 600 V 200 A 400 3500 A2S MacMic S cience & Technology Co., Ltd. Add:#18 , Hua Shan Zhong Lu, New District, Chan gzhou City, Jiangsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86 -519-85162291 Post Code:2130.

Part

MMG200W060X6EN

Description

IGBT



Feature


February 2017 PRODUCT FEATURES □ IGBT3 Chip(Trench+Field Stop technology) □ High short circuit capability,self lim iting short circuit current □ Low sat uration voltage and positive temperatur e coefficient □ Fast switching and sh ort tail current □ Free wheeling diod es with fast and soft reverse recovery □ Industry standard package with insu lated copper base plate and so.
Manufacture

MacMic

Datasheet
Download MMG200W060X6EN Datasheet




 MMG200W060X6EN
February 2017
PRODUCT FEATURES
IGBT3 Chip(Trench+Field Stop technology)
High short circuit capability,self limiting short circuit current
Low saturation voltage and positive temperature coefficient
Fast switching and short tail current
Free wheeling diodes with fast and soft reverse recovery
Industry standard package with insulated copper base
plate and soldering pins for PCB mounting
Temperature sense included
MMG200W060X6EN
Version 1
600V 200A Six-Pack Module
RoHS Compliant
APPLICATIONS
AC motor control
Motion/servo control
Inverter and power supplies
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES
VGES
Collector Emitter Voltage
Gate Emitter Voltage
TJ=25
IC
DC Collector Current
ICM
Repetitive Peak Collector Current
TC=25, TJmax=175
TC=60, TJmax=175
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25, TJmax=175
Values
Unit
600
V
±20
240
200
A
400
600
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25
IF(AV)
Average Forward Current
IFRM
Repetitive Peak Forward Current
tp=1ms
I2t
TJ =125, t=10ms, VR=0V
Values
Unit
600
V
200
A
400
3500
A2S
MacMic Science & Technology Co., Ltd.
Add#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
Tel.+86-519-85163708 Fax+86-519-85162291 Post Code213022 Websitewww.macmicst.com
3




 MMG200W060X6EN
MMG200W060X6EN
IGBT-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE=VGE, IC=3.2mA
VCE(sat)
Collector Emitter
Saturation Voltage
IC=200A, VGE=15V, TJ=25
IC=200A, VGE=15V, TJ=125
ICES
Collector Leakage Current
VCE=600V, VGE=0V, TJ=25
VCE=600V, VGE=0V, TJ=125
IGES
Gate Leakage Current
VCE=0V,VGE=±15V, TJ=25
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=300V, IC=200A , VGE=±15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
VCE=25V, VGE=0V, f =1MHz
td(on)
Turn on Delay Time
tr
Rise Time
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
td(off)
Turn off Delay Time
tf
Fall Time
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
Eon
Turn on Energy
Eoff
Turn off Energy
VCC=300V,IC=200A
RG =2.0,
VGE=±15V,
Inductive Load
TJ=25
TJ=125
TJ=25
TJ=125
ISC
Short Circuit Current
tpsc6µS , VGE=15V
TJ=125,VCC=360V
RthJC Junction to Case Thermal Resistance Per IGBT
Min.
4.9
-400
Typ.
5.8
1.45
1.6
2
2.15
13
0.38
150
160
30
40
340
370
60
70
1
1.55
5.65
6.9
1000
Max. Unit
6.5
1.9
V
1
mA
5
mA
400 nA
µC
nF
nF
ns
ns
ns
ns
ns
ns
ns
ns
mJ
mJ
mJ
mJ
A
0.25 K /W
Diode-inverter
ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VF
Forward Voltage
IF=200A , VGE=0V, TJ=25
IF=200A , VGE=0V, TJ=125
trr
Reverse Recovery Time
IRRM
Max. Reverse Recovery Current
QRR
Reverse Recovery Charge
Erec
Reverse Recovery Energy
IF=200A , VR=300V
dIF/dt=-5700A/μs
TJ =125
RthJCD Junction to Case Thermal Resistance Per Diode
Min. Typ. Max. Unit
1.55 1.95
V
1.50
170
ns
230
A
17
µC
5.2
mJ
0.45 K /W
4




 MMG200W060X6EN
MMG200W060X6EN
NTC CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
R25
Resistance
TC =25
B25/50
R2 = R25 exp [B25/50(1/T2 - 1/(298.15 K))]
Min. Typ. Max. Unit
5
K
3375
K
MODULE CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
TJmax
TJop
Tstg
Visol
Max. Junction Temperature
Operating Temperature
Storage Temperature
Isolation Breakdown Voltage
AC, 50Hz(R.M.S), t=1minute
CTI
Comparative Tracking Index
Md
Mounting Torque
RecommendedM5
Weight
Values
Unit
175
-40~150
-40~125
3000
V
>200
2.5~5
Nm
300
g
400
25
125
300
200
100
VGE=15V
0
0
1
2
3
VCEV
Figure 1. Typical Output Characteristics IGBT-inverter
400
Vge=17V
Vge=15V
300
Vge=13V
Vge=11V
200
Vge=9V
100
TJ=125
0
0
1
2
3
4
5
VCEV
Figure 2. Typical Output Characteristics IGBT-inverter
5






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