MOSFET
IQE013N04LM6CG
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
•Optimizedforsynchronousrectification •Verylowon-sta...
Description
IQE013N04LM6CG
MOSFET
OptiMOSTMPower-MOSFET,40V
Features
Optimizedforsynchronousrectification Verylowon-stateresistanceRDS(on) 100%avalanchetested Superiorthermalresistance N-channel,logiclevel Pb-freeleadplating;RoHScompliant Halogen-freeaccordingtoIEC61249-2-21
Productvalidation
FullyqualifiedaccordingtoJEDECforIndustrialApplications
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
40
V
RDS(on),max
1.35
mΩ
ID
205
A
Qoss
45
nC
Qg(0V..10V)
41
nC
PG-TTFN-9-1 1 234
9
8765
Drain Pin 5-8
Gate Pin 9
Source Pin 1-4
Type/OrderingCode IQE013N04LM6CG
Package PG-TTFN-9-1
Marking 01304C6
RelatedLinks -
Final Data Sheet
1
Rev.2.0,2020-07-15
OptiMOSTMPower-MOSFET,40V
IQE013N04LM6CG
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . ...
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