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STOP IGBT. 40N60NPFD Datasheet

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STOP IGBT. 40N60NPFD Datasheet






40N60NPFD IGBT. Datasheet pdf. Equivalent




40N60NPFD IGBT. Datasheet pdf. Equivalent





Part

40N60NPFD

Description

600V FIELD STOP IGBT

Manufacture

Silan

Datasheet
Download 40N60NPFD Datasheet


Silan 40N60NPFD

40N60NPFD; SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN u sing Field Stop IGBT technology, offer the optimum performance for induction H eating, UPS, SMPS and PFC application. FEATURES  40A, 600V, VCE(sat)(typ.)= 1.8V@IC=40A  Low conduction loss  Fast switching  High input impedanc e NOMENCLATURE ORDERING INFORMATION P art No. SGT40N60NPFDPN Pa.


Silan 40N60NPFD

ckage TO-3P Marking 40N60NPFD Hazardou s Substance Control Pb free ABSOLUTE M AXIMUM RATINGS (TC = 25°C unless other wise noted) Parameter Collector to Em itter Voltage Gate to Emitter Voltage Collector Current TC=25°C TC=100°C Pulsed Collector Current Maximum Powe r Dissipation (TC=25C) Operating Jun ction Temperature Storage Temperature R ange Symbol VCE VGE IC.


Silan 40N60NPFD

ICM PD TJ Tstg Ratings 600 ±20 80 40 120 290 2.32 -55~+175 -55~+175 Pac king Tube Units V V A A W W/C C C HANGZHOU SILAN MICROELECTRONICS CO .,LTD http: //www.silan.com.cn Rev.:1. 3 Page 1 of 6 SGT40N60NPFDPN_Datasheet THERMAL CHARACTERISTICS Parameter The rmal Resistance, Junction to Case (IGBT ) Thermal Resistance, Junction to Case (FRD) Thermal Resistance, Jun.



Part

40N60NPFD

Description

600V FIELD STOP IGBT

Manufacture

Silan

Datasheet
Download 40N60NPFD Datasheet




 40N60NPFD
SGT40N60NPFDPN_Datasheet
40A, 600V FIELD STOP IGBT
DESCRIPTION
SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum
performance for induction Heating, UPS, SMPS and PFC application.
FEATURES
40A, 600V, VCE(sat)(typ.)=1.8V@IC=40A
Low conduction loss
Fast switching
High input impedance
NOMENCLATURE
ORDERING INFORMATION
Part No.
SGT40N60NPFDPN
Package
TO-3P
Marking
40N60NPFD
Hazardous Substance Control
Pb free
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
TC=25°C
TC=100°C
Pulsed Collector Current
Maximum Power Dissipation (TC=25C)
Operating Junction Temperature
Storage Temperature Range
Symbol
VCE
VGE
IC
ICM
PD
TJ
Tstg
Ratings
600
±20
80
40
120
290
2.32
-55+175
-55+175
Packing
Tube
Units
V
V
A
A
W
W/C
C
C
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 1 of 6





 40N60NPFD
SGT40N60NPFDPN_Datasheet
THERMAL CHARACTERISTICS
Parameter
Thermal Resistance, Junction to Case (IGBT)
Thermal Resistance, Junction to Case (FRD)
Thermal Resistance, Junction to Ambient
Symbol
RθJC
RθJC
RθJA
Ratings
0.24
1.4
35.5
ELECTRICAL CHARACTERISTICS OF IGBT (TC = 25°C unless otherwise noted)
Parameter
Collector to Emitter
Breakdown Voltage
C-E Leakage Current
G-E Leakage Current
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
Symbol
Test conditions
Min.
BVCE
VGE=0V,IC=250uA
600
ICES
VCE=600V,VGE=0V
--
IGES
VGE=20V,VCE=0V
--
VGE(th)
IC=250uA,VCE=VGE
4.0
IC=40A,VGE=15V
--
VCE(sat)
IC=40A,VGE=15V,TC=125C
--
Cies
VCE=30V
--
Coes
VGE=0V
--
Cres
f=1MHz
--
Td(on)
--
Tr
VCE=400V
--
Td(off)
IC=40A
--
Tf
Rg=10Ω
--
Eon
VGE=15V
--
Eoff
Inductive Load,
--
Est
--
Qg
--
VCE = 300V, IC=20A,
Qge
--
VGE = 15V
Qgc
--
Typ.
--
--
--
5.0
1.8
2.1
1850
180
50
18
80
110
105
1.87
0.68
2.55
100
11
52
ELECTRICAL CHARACTERISTICS OF FRD (TC = 25°C unless otherwise noted)
Parameter
Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Symbol
Vfm
Trr
Qrr
Test conditions
IF = 20A TC=25C
IF = 20A TC=125C
IES =20A, dIES/dt=200A/μs
IES =20A, dIES/dt=200A/μs
Min.
--
--
--
--
Typ.
1.9
1.5
32
74
Units
C/W
C/W
C/W
Max.
--
200
±500
6.5
2.7
--
--
--
--
--
--
--
--
--
--
--
--
--
--
Units
V
uA
nA
V
V
V
pF
ns
mJ
nC
Max.
2.6
--
--
--
Units
V
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 6





 40N60NPFD
SGT40N60NPFDPN_Datasheet
TYPICAL CHARACTERISTICS CURVE
Figure 1. Typical output characteristics
120
TC=25°C
100
20V
15V
12V
80
10V
60
40
VGE=8V
20
0
0
1.5
3.0
4.5
6.0
Collector-Emitter voltage VCE(V)
Figure 3. Typical saturation voltage characteristic
120
Emitter in
100 common
VGE=15V
80
TC=25°C
60
TC=125°C
40
20
0
0
1
2
3
4
5
Collector-Emitter voltage VCE(V)
Figure 5. Saturation voltage vs. VGE
20
Emitter in
common
TC=25°C
16
12
80A
8
40A
IC=20A
4
0
4
8
12
16
20
Gate-Emitter voltage VGE(V)
Figure 2. Typical output characteristics
120
TC=125°C
100
20V
15V
12V
80
10V
60
40
VGE=8V
20
0
0
1.5
3.0
4.5
6.0
Collector-Emitter voltageVCE(V)
Figure 4. Transmission characteristic
120
Emitter in
100 common
VGE=20V
80
60
40
TC=125°C
20
TC=25°C
0
4 5 6 7 8 9 10 11 12
Gate-Emitter voltage VGE(V)
Figure 6. Saturation voltage vs. VGE
20
Emitter in
common
TC=125°C
16
12
80A
8
40A
IC=20A
4
0
4
8
12
16
20
Gate-Emitter voltageVGE(V)
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 3 of 6



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