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Digital transistor. DTDG14GPT100 Datasheet







DTDG14GPT100 transistor. Datasheet pdf. Equivalent




Part

DTDG14GPT100

Description

Digital transistor



Feature


DTDG14GP 1A/60V Digital Transistor (with built-in resistor and zener diode) Pa rameter VCEO IC R   Value 60±10V 1A 10kΩ   lFeatures 1)High hFE.   3 00(Min.) (VCE/IC=2V/0.5A) 2)Low saturat ion voltage.   (VCE(sat)=400mV at IC/ IB=500mA/5mA) 3)Built-in zener diode gi ves strong  protection against revers e surge  by L-load (an inductive load ). lOutline SOT-89   SC-62 .
Manufacture

Rohm

Datasheet
Download DTDG14GPT100 Datasheet


Rohm DTDG14GPT100

DTDG14GPT100;           (MPT3)                lIn ner circuit Datasheet lApplication DR IVER lPackaging specifications Part N o. Package DTDG14GP SOT-89 (MPT3) P ackage size 4540                          Taping code Reel size Tape wid th (mm) (mm) Basic ordering unit.(pcs) Marking T100 180 12 1000 E01                                                            .


Rohm DTDG14GPT100

                             www.rohm.com © 2 015 ROHM Co., Ltd. All rights reserved. 1/5 20150925 - Rev.001 DTDG14GP          lAbsolute maximum ratings (Ta = 25°C) Parameter Collect or-base voltage Collector-emitter volta ge Emitter-base voltage Collector curr ent Power dissipation Junction tempera ture Range of storage temperature                 Datasheet .


Rohm DTDG14GPT100

Symbol Values Unit VCBO 60±10 V V CEO 60±10 V VEBO 5 V IC 1 A I CP*1 2 A PD*2 0.5 W PD*3 2.0 W Tj 150 ℃ Tstg -55 to +150 ℃ lElectrical characteristics (Ta = 25°C ) Parameter Symbol Conditions Value s Unit Min. Typ. Max. Collector-base b reakdown voltage BVCBO IC = 50μA 50 - 70 V Collector-emitter breakdown voltage BVCEO IC = 1mA E.




 DTDG14GPT100
DTDG14GP
1A/60V Digital Transistor (with built-in resistor and zener diode)
Parameter
VCEO
IC
R
 
Value
60±10V
1A
10kΩ
 
lFeatures
1)High hFE.
  300(Min.) (VCE/IC=2V/0.5A)
2)Low saturation voltage.
  (VCE(sat)=400mV at IC/IB=500mA/5mA)
3)Built-in zener diode gives strong
 protection against reverse surge
 by L-load (an inductive load).
lOutline
SOT-89
 
SC-62
 
 
 
 
 
(MPT3)
 
              
lInner circuit
Datasheet
lApplication
DRIVER
lPackaging specifications
Part No.
Package
DTDG14GP
SOT-89
(MPT3)
Package
size
4540
                      
Taping
code
Reel size Tape width
(mm) (mm)
Basic
ordering
unit.(pcs)
Marking
T100
180
12
1000
E01
                                                                                        
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
20150925 - Rev.001




 DTDG14GPT100
DTDG14GP
          
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
                Datasheet
Symbol
Values
Unit
VCBO
60±10
V
VCEO
60±10
V
VEBO
5
V
IC
1
A
ICP*1
2
A
PD*2
0.5
W
PD*3
2.0
W
Tj
150
Tstg
-55 to +150
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Collector-base breakdown
voltage
BVCBO IC = 50μA
50
-
70
V
Collector-emitter breakdown
voltage
BVCEO IC = 1mA
Emitter-base breakdown voltage BVEBO IE = 720μA
Collector cut-off current
ICBO VCB = 40V
Emitter cut-off current
IEBO VEB = 4V
Collector-emitter saturation voltage VCE(sat) IC = 500mA, IB = 5mA
DC current gain
hFE VCE = 2V, IC=500mA
Emitter-base resistance
R
-
50
-
70
V
5
-
-
V
-
- 500 nA
300 - 580 μA
-
- 400 mV
300 -
-
-
7 10 13 kΩ
Transition frequency
f
*4
T
VCE = 5V, IE = -100mA,
f = 30MHz
-
80
- MHz
*1 Pw10ms, duty=1/2
*2 Each terminal mounted on a reference land.
*3 Mounted on a 40×40×0.7mm ceramic board.
*4 Characteristics of built-in transistor.
                                            
 
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
2/5
                                        
20150925 - Rev.001




 DTDG14GPT100
DTDG14GP
 
 
lElectrical characteristic curves (Ta =25°C)
        
Datasheet
Fig.1 Ground Emitter Propagation
    Characteristics
Fig.2 Typical Output Characteristics
Fig.3 DC Current Gain vs. Collector Current
Fig.4 Collector-Emitter Saturation Voltage
    vs. Collector Current(I)
                                                                                          
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
3/5
20150925 - Rev.001



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