Document
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
Plastic Medium-Power Complementary Silicon Transistors
These devices are designed for general−purpose amplifier and low−speed switching applications.
Features
• High DC Current Gain −
hFE = 2500 (Typ) @ IC = 4.0 Adc
• Collector Emitter Sustaining Voltage − @ 100 mAdc
VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B
VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C
• Low Collector−Emitter Saturation Voltage −
VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc
• Monolithic Construction with Built−In Base−Emitter Shunt Resistors
• These Devices are Pb−Free and are RoHS Compliant*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
VCEO
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
80
BDX53C, BDX54C
100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
VCB
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B
BDX53C, BDX54C
Vdc 80 100
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak
VEB
5.0
Vdc
IC
8.0
Adc
12
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
IB
0.2
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C
PD
65
W
Derate above 25°C
0.48
W/°C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg −65 to +150 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic
Symbol
Max
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case
RqJA RqJC
70
°C/W
1.92
°C/W
www.onsemi.com
DARLINGTON 8 AMPERE
COMPLEMENTARY SILICON POWER TRANSISTORS
80−100 VOLTS, 65 WATTS
4
1 2 3
TO−220 CASE 221A
STYLE 1
MARKING DIAGRAM & PIN ASSIGNMENT
4 Collector
BDX5xyG AY WW
1
3
Base 2 Emitter
Collector
BDX5xy =
A
=
Y
=
WW =
G
=
Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb−Free Package
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
1
November, 2014 − Rev. 15
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet.
Publication Order Number: BDX53B/D
BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP)
TA TC 4.0 80
PD, POWER DISSIPATION (WATTS)
3.0 60 2.0 40 1.0 20
TC TA
0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C)
Figure 1. Power Derating
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 1) (IC.