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BDX54CG Dataheets PDF



Part Number BDX54CG
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Plastic Medium-Power Complementary Silicon Transistors
Datasheet BDX54CG DatasheetBDX54CG Datasheet (PDF)

BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc.

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc • Collector Emitter Sustaining Voltage − @ 100 mAdc VCEO(sus) = 80 Vdc (Min) − BDX53B, 54B VCEO(sus) = 100 Vdc (Min) − BDX53C, 54C • Low Collector−Emitter Saturation Voltage − VCE(sat) = 2.0 Vdc (Max) @ IC = 3.0 Adc VCE(sat) = 4.0 Vdc (Max) @ IC = 5.0 Adc • Monolithic Construction with Built−In Base−Emitter Shunt Resistors • These Devices are Pb−Free and are RoHS Compliant* ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating Symbol Value Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage VCEO Vdc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B 80 BDX53C, BDX54C 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage VCB ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ BDX53B, BDX54B BDX53C, BDX54C Vdc 80 100 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector Current − Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Peak VEB 5.0 Vdc IC 8.0 Adc 12 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current IB 0.2 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Device Dissipation @ TC = 25°C PD 65 W Derate above 25°C 0.48 W/°C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range TJ, Tstg −65 to +150 °C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Max Unit ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Ambient ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Thermal Resistance, Junction−to−Case RqJA RqJC 70 °C/W 1.92 °C/W www.onsemi.com DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 80−100 VOLTS, 65 WATTS 4 1 2 3 TO−220 CASE 221A STYLE 1 MARKING DIAGRAM & PIN ASSIGNMENT 4 Collector BDX5xyG AY WW 1 3 Base 2 Emitter Collector BDX5xy = A = Y = WW = G = Device Code x = 3 or 4 y = B or C Assembly Location Year Work Week Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 1 November, 2014 − Rev. 15 ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: BDX53B/D BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) TA TC 4.0 80 PD, POWER DISSIPATION (WATTS) 3.0 60 2.0 40 1.0 20 TC TA 0 0 20 40 60 80 100 120 140 160 T, TEMPERATURE (°C) Figure 1. Power Derating ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 1) (IC.


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