0510GN-25-CP

0510GN-25-CP 25 Watts 50 Volts Pulsed & CW 50MHz-1GHz Broadband GaN Amplifier Ceramic SMT Package GENERAL DESCRIPTION The 0510GN-25-CP is a COMMON SOURCE, class-AB, GaN on SiC HEMT transistor amplifier for 50MHz-1GHz broadband pulsed and CW RF power applications. The transistor is housed in a Ceramic SMT package with high-thermal conductivity to provide superior electrical and thermal performance with excellent reliability & ruggedness. FEATURES:  Wide-band 50MHz-1GHz general purpose driver applications  Single lumped-element Broadband application circuit  Ideal for Pulsed Radar, Avionics, ISM, and CW Communication  Commercial & Military Applications  25 W Pulsed/CW Psat, 16 dB Power Gain and 50 % Drain Efficiency  Low-cost Ceramic SMT package with excellent RF & Thermal performance, reliability & ruggedness  50V Bias Operation with high breakdown voltage PACKAGE OUTLINE Ceramic SMT 160X200 MIL ABSOLUTE MAXIMUM RATINGS Maximum CW Power Dissipation Device Dissipation @ 25C 25 W Maximum Voltage and Current Drain-Source Voltage (VDSS) Gate-Source Voltage (VGS) Supply Current ( IDD ) 125 V -8 to +0 V 1400 mA Maximum Temperatures Storage Temperature (TSTG) -55 to +150 C Operating Junction Temperature +200 C TYPICAL CW BROADBAND PERFORMANCE SUMMARY 1 @ 25C Parameter Units 50 MHz 300 MHz 500 MHz 700 MHz 900 MHz 1 GHz Output Power Psat W 33 36 31 27 29 27 Power Gain dB 16 16.5 16 15.5 15.7 15.5 D Drain Efficiency % 85 75 61 50 52...