0405SC-1500M

0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION TRANSISTOR (SIT) capable of providing 1500 Watts of RF power from 406 to 450 MHz. The transistor is designed for use in High Power Amplifiers supporting applications such as UHF Weather Radar and Long Range Tracking Radar. The device is an addition to a series of High Power Silicon Carbide Transistors from Microsemi PPG. CASE OUTLINE 55ST FET (Common Gate) ABSOLUTE MAXIMUM RATINGS Voltage and Current Drain-Source (VDSS) Gate-Source (VGS) Temperatures Storage Temperature Operating Junction Temperature 250V -1V -65 to +150°C +250°C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL Idss Igss θJC1 CHARACTERISTICS Drain-Source Leakage Current Gate-Source Leakage Current Thermal Resistance TEST CONDITIONS VGS = -20V, VDG= 125V VGS = -20V, VDS = 0V MIN TYP MAX 750 50 0.15 UNITS µA µA ºC/W FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(ave) = 125 mA, Freq = 406, 425, 450 MHz, GPG Common Gate Power Gain Pout = 1500 W, Pulsed 7.5 8.0 dB Pin Input Power Pulse Width = 300us, DF = 6% 250 270 W ηd Drain Efficiency F = 450 MHz, Pout =1500W 50 55 % ψ Load Mismatch F = 420 MHz, Pout = 1500W 5:1 Po +1dB Power Output – Higher Drive F = 450 MHz, Pin = 255 W 1600 W Vgs Gate source Voltage Set for Idq(ave) = 125mA 3....