0150SC-1250M Rev B
0150SC-1250M
1250Watts, 125 Volts, Class AB 150 to 160 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICA...
0150SC-1250M Rev B
0150SC-1250M
1250Watts, 125 Volts, Class AB 150 to 160 MHz
Silicon Carbide SIT
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0150SC-1250M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION
TRANSISTOR (SIT) capable of providing 1250 Watts minimum of RF power from 150 to 160 MHz. The
transistor is designed for use in High Power Amplifiers supporting applications such as VHF Weather Radar and Long Range Tracking Radar. The device is the first in a series of High Power Silicon Carbide
Transistors from Microsemi PPG.
CASE OUTLINE 55KT FET
(Common Gate) See outline drawing
ABSOLUTE MAXIMUM RATINGS
Voltage and Current Drain-Source (VDSS) Gate-Source (VGS)
Drain Current (Idg)
Temperatures Storage Temperature Operating Junction Temperature
250 V - 1V 35A
-65 to +150°C +250°C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS
TEST CONDITIONS
MIN TYP MAX UNITS
Idss1
Drain-Source Leakage Current VGS = -15V, VDG = 95V
Igss
Gate-Source Leakage Current VGS = -20V, VDS = 0V
θJC1
Thermal Resistance
Pout=1250W
750 µA
50
µA
0.15 ºC/W
FUNCTIONAL CHARACTERISTICS @ 25°C, Vdd = 125V, Idq(avg) = 500 mA, Freq = 155 MHz,
GPG Pin ηd ψ Po +1dB
Common Gate Power Gain Input Power Drain Efficiency Load Mismatch Power Output – Higher Drive
Pout = 1250 W, Pulsed Pulse Width = 300us, DF = 10% F = 155 MHz, Pout =1250W F = 155 MHz, Pout = 1250W F = 155 MHz, Pin = 190 W
9.0 9.5 150 160
60 10:1
1400
Vsg
Source-Gate Voltage
Set for Idq(avg...