RJP63F3DPP-M0
Silicon N Channel IGBT High Speed Power Switching
Features
Trench gate and thin wafer technology (G6H series) Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ High speed switching tf = 100 ns typ Low leak current ICES = 1 μA max Isolated package TO-220FL
Outline
RENESAS Package code: PRSS0003AF-A) (Package name: TO-2...
