Document
DGS 4-025A DGS 3-025AS DGSK 8-025A
Gallium Arsenide Schottky Rectifier
IFAV
= 5.4 A
VRRM = 250 V
CJunction = 6.4 pF
Type DGS 3-025AS DGS 4-025A DGSK 8-025A
Marking on product
3A250AS DGS 4-025A
Single Single
Circuit
A
C
A
C
Package
A = Anode, C = Cathode , TAB = Cathode
TO-252 AA
A
C (TAB)
A
TO-220 AC C
A
C (TAB)
DGSK 8-025A
Common cathode
TO-220 AB A
C
A
A
C
A
C (TAB)
Symbol
VRRM/RSM IFAV IFAV IFSM TVJ Tstg Ptot Md
Conditions
TC = 25°C; DC TC = 90°C; DC TVJ = 45°C; tp = 10 ms (50 Hz), sine
TC = 25°C mounting torque (TO-220)
Maximum Ratings
250
V
5.4
A
3.9
A
10
A
-55...+175
°C
-55...+150
°C
18
W
0.4...0.6
Nm
Symbol
IR
VF
CJ RthJC RthCH Weight
Conditions
TVJ = 25°C VR = VRRM TVJ = 125°C VR = VRRM
IF = 2 A; IF = 2 A;
TVJ = 125°C TVJ = 25°C
VR = 100 V; TVJ = 125°C
TO-220
TO-252 TO-220
Characteristic Values typ. max.
0.7
mA
0.7
mA
1.3
V
1.3
1.6
V
6.4
pF
8.5 K/W
0.5
K/W
0.3
g
2
g
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified
Features
• Low forward voltage • Very high switching speed • Low junction capacity of GaAs
- low reverse current peak at turn off • Soft turn off • Temperature independent switching
behaviour • High temperature operation capability • Epoxy meets UL 94V-0
Applications
• MHz switched mode power supplies (SMPs)
• Small size SMPs • High frequency converters • Resonant converters
435
IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved
1-2
10 A 1 IF 0,1
0,01
TVJ = 125°C
25°C
100 pF CJ
10
DGS 4-025A DGS 3-025AS DGSK 8-025A
Outline TO-220
TVJ = 125°C
0,001 0,0 0,5 1,0 1,5 V 2,0 VF
Fig. 1 typ. forward characteristics
10 K/W
1 ZthJC
0,1
0,01
Single Pulse
1
0,1
1
10 100 V 1000
VR
Fig. 2 typ. junction capacity
versus blocking voltage
Dim. Millimeter Min. Max.
A 12.70 13.97 B 14.73 16.00
C 9.91 10.66 D 3.54 4.08
E 5.85 6.85 F 2.54 3.18
G 1.15 1.65 H 2.79 5.84
J 0.64 1.01 K 2.54 BSC
M 4.32 4.82 N 1.14 1.39
Q 0.38 0.56 R 2.29 2.79
Inches Min. Max.
0.500 0.550 0.580 0.630
0.390 0.420 0.139 0.161
0.230 0.270 0.100 0.125
0.045 0.065 0.110 0.230
0.025 0.040 0.100 BSC
0.170 0.190 0.045 0.055
0.015 0.022 0.090 0.110
Outlines TO-252
0,00001
0,0001
0,001
0,01
0,1
Fig. 3 typ. thermal impedance junction to case
DGS3-025AS
1 s 10 t
Note: explanatory comparison of the basic operational behaviour of rectifier diodes and Gallium Arsenide Schottky diodes:
conduction forward characteristics turn off characteristics
turn on characteristics
Rectifier Diode
by majority + minority carriers VF (IF) extraction of excess carriers causes temperature dependant reverse recovery (trr, IRM, Qrr) delayed saturation leads to VFR
GaAs Schottky Diode
by majority carriers only VF (IF), see Fig. 1 reverse current charges junction capacity CJ, see Fig. 2; not temperature dependant no turn on overvoltage peak
IXYS reserves the right to change limits, test conditions and dimensions © 2004 IXYS All rights reserved
1 Anode 2 NC 3 Anode 4 Cathode
Dim.
A A1 A2 b b1 b2 c c1 D D1 E E1 e e1 H L L1 L2 L3
Millimeter Min. Max.
2.19 2.38 0.89 1.14
0 0.13 0.64 0.89
0.76 1.14 5.21 5.46
0.46 0.58 0.46 0.58
5.97 6.22 4.32 5.21
6.35 6.73 4.32 5.21
2.28 BSC 4.57 BSC
9.40 10.42 0.51 1.02
0.64 1.02 0.89 1.27 2.54 2.92
Inches Min. Max.
0.086 0.094 0.035 0.045
0 0.005 0.025 0.035
0.030 0.045 0.205 0.215
0.018 0.023 0.018 0.023
0.235 0.245 0.170 0.205
0.250 0.265 0.170 0.205
0.090 BSC 0.180 BSC
0.370 0.410 0.020 0.040
0.025 0.035 0.100
0.040 0.050 0.115
435
2-2
.