RB228T150

Schottky Barrier Diode RB228T150 Data Sheet lApplication Switching power supply lDimensions (Unit : mm) 4.5±00..31 lStructure 10.0± 0.3 0.1 f3.2±0.2 2.8±00..21 12.0±0.2 lFeatures 1) Cathode common type r 2) High reliability o 3) Super low IR d f lConstruction de Silicon epitaxial planar type 15.0± 0. 4 0. 2 1 1.2 1.3 0.8 2.45±0.5 2.45±0.5 (1) (2) (3) 5.0±0.2 8.0±0.2 14.0±0.5 2.6±0.5 0.75±00..015 ROHM : TO220FN 1 : Manufacture Date (1) (2) (3) Anode Cathode Anode men igns lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Conditions Limits Unit s Repetitive Peak Reverse Voltage VRM Duty≦0.5 150 V m e Reverse Voltage VR Direct Reverse Voltage 150 V o D Average Forward Rectified Current Io Glass epoxy board mounted, 60Hz half sin wave, resistive load, IO/2 per diode,Tc=100ºC Max. 30 A c Non-repetitive Forward Current Surge Peak IFSM 60Hz half sin wave, Non-repetitive at Ta=25ºC, 1cycle, per diode 100 A e Operating Junction Temperature Tj - 150 °C w Storage Temperature Tstg - -55 to +150 °C t R Ne lElectrical and Thermal Characteristics (Tj= 25°C) oParameter Symbol Conditions NForward Voltage VF IF=15A Min. Typ. Max. Unit - - 0.88 V Reverse Current IR VR=150V - - 25 mA Thermal Resistance Rth(j-c) Junction to case - - 2 °C / W www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/5 2014.11 - Rev.A RB228T150 lElectrical Characteristic Curves Data Sheet FORWARD CURRENT : IF(A) 100 10000 REVERSE C...