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MMG300D120B6TC Dataheets PDF



Part Number MMG300D120B6TC
Manufacturers MacMic
Logo MacMic
Description IGBT
Datasheet MMG300D120B6TC DatasheetMMG300D120B6TC Datasheet (PDF)

December 2019 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ High short circuit capability □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems MMG300D120B6TC Version 01 1200V 300A IGBT Module RoHS Compliant IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C .

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December 2019 PRODUCT FEATURES □ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ High short circuit capability □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses APPLICATIONS □ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems MMG300D120B6TC Version 01 1200V 300A IGBT Module RoHS Compliant IGBT-inverter ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VCES Collector Emitter Voltage TJ=25℃ VGES Gate Emitter Voltage IC DC Collector Current TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃ ICM Repetitive Peak Collector Current tp=1ms Ptot Power Dissipation Per IGBT TC=25℃, TJmax=175℃ Values Unit 1200 V ±20 438 300 A 600 1500 W Diode-inverter ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VRRM Repetitive Reverse Voltage TJ=25℃ IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2t tp=1ms TJ =125℃, t=10ms, VR=0V Values Unit 1200 V 300 A 600 19000 A2S MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com MMG300D120B6TC MMG300D120B6TC IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VGE(th) Gate Emitter Threshold Voltage VCE(sat) Collector - Emitter Saturation Voltage ICES Collector Leakage Current IGES Gate Leakage Current VCE=VGE, IC=12mA IC=300A, VGE=15V, TJ=25℃ IC=300A, VGE=15V, TJ=125℃ IC=300A, VGE=15V, TJ=150℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃ VCE=0V,VGE=±20V, TJ=25℃ Rgint Integrated Gate Resistor Qg Gate Charge VCE=600V, IC=300A , VGE=15V Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn on Delay Time tr Rise Time td(off) Turn off Delay Time tf Fall Time Eon Turn on Energy Eoff Turn off Energy VCE=25V, VGE=0V, f =1MHz VCC=600V,IC=300A RG =2.7Ω, VGE=±15V, Inductive Load VCC=600V,IC=300A RG =2.7Ω, VGE=±15V, Inductive Load VCC=600V,IC=300A RG =2.7Ω, VGE=±15V, Inductive Load TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃ ISC Short Circuit Current tpsc≤10µS , VGE=15V TJ=150℃,VCC=800V RthJC Junction to Case Thermal Resistance (Per IGBT) Min. 5.0 -400 Typ. 5.8 1.85 2.15 2.2 1.8 1.5 21 1 120 140 150 70 75 80 440 500 520 100 180 200 52 54 29 32 1100 Max. Unit 6.5 2.25 V 1 mA 10 400 nA Ω µC nF nF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ A 0.1 K /W Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions IF=300A , VGE=0V, TJ =25℃ VF Forward Voltage IF=300A , VGE=0V, TJ =125℃ IF=300A , VGE=0V, TJ =150℃ .


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