Document
December 2019
PRODUCT FEATURES
□ IGBT CHIP(Trench+Field Stop technology) □ VCE(sat) with positive temperature coefficient □ High short circuit capability □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Low switching losses
APPLICATIONS
□ High frequency switching application □ Medical applications □ Motion/servo control □ UPS systems
MMG300D120B6TC
Version 01
1200V 300A IGBT Module RoHS Compliant
IGBT-inverter
ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VCES Collector Emitter Voltage
TJ=25℃
VGES Gate Emitter Voltage
IC
DC Collector Current
TC=25℃, TJmax=175℃ TC=95℃, TJmax=175℃
ICM
Repetitive Peak Collector Current
tp=1ms
Ptot
Power Dissipation Per IGBT
TC=25℃, TJmax=175℃
Values
Unit
1200 V
±20
438
300
A
600
1500
W
Diode-inverter
ABSOLUTE MAXIMUM RATINGS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VRRM Repetitive Reverse Voltage
TJ=25℃
IF(AV) Average Forward Current
IFRM
Repetitive Peak Forward Current
I2t
tp=1ms TJ =125℃, t=10ms, VR=0V
Values
Unit
1200
V
300 A
600
19000
A2S
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China
1
Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
MMG300D120B6TC
MMG300D120B6TC
IGBT-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
VGE(th) Gate Emitter Threshold Voltage
VCE(sat)
Collector - Emitter Saturation Voltage
ICES
Collector Leakage Current
IGES
Gate Leakage Current
VCE=VGE, IC=12mA IC=300A, VGE=15V, TJ=25℃ IC=300A, VGE=15V, TJ=125℃ IC=300A, VGE=15V, TJ=150℃ VCE=1200V, VGE=0V, TJ=25℃ VCE=1200V, VGE=0V, TJ=150℃ VCE=0V,VGE=±20V, TJ=25℃
Rgint
Integrated Gate Resistor
Qg
Gate Charge
VCE=600V, IC=300A , VGE=15V
Cies
Input Capacitance
Cres
Reverse Transfer Capacitance
td(on)
Turn on Delay Time
tr
Rise Time
td(off)
Turn off Delay Time
tf
Fall Time
Eon
Turn on Energy
Eoff
Turn off Energy
VCE=25V, VGE=0V, f =1MHz
VCC=600V,IC=300A RG =2.7Ω, VGE=±15V, Inductive Load
VCC=600V,IC=300A RG =2.7Ω, VGE=±15V, Inductive Load
VCC=600V,IC=300A RG =2.7Ω, VGE=±15V, Inductive Load
TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=25℃ TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃ TJ=125℃ TJ=150℃
ISC
Short Circuit Current
tpsc≤10µS , VGE=15V TJ=150℃,VCC=800V
RthJC Junction to Case Thermal Resistance (Per IGBT)
Min. 5.0
-400
Typ. 5.8 1.85 2.15 2.2
1.8 1.5 21 1 120 140 150 70 75 80 440 500 520 100 180 200 52 54 29 32
1100
Max. Unit 6.5 2.25
V
1 mA
10 400 nA
Ω µC nF nF ns ns ns ns ns ns ns ns ns ns ns ns mJ mJ mJ mJ
A
0.1 K /W
Diode-inverter ELECTRICAL CHARACTERISTICS (T C =25°C unless otherwise specified)
Symbol
Parameter/Test Conditions
IF=300A , VGE=0V, TJ =25℃
VF
Forward Voltage
IF=300A , VGE=0V, TJ =125℃
IF=300A , VGE=0V, TJ =150℃
.