Document
NIV2161, NIS2161
ESD Protection with Automotive Short-toBattery & Ground Protection
Low Capacitance ESD Protection w/ short− to−battery and short−to−ground Protection for Automotive High Speed Data Lines
The NIS/NIV2161 is designed to protect high speed data lines from ESD as well as short to vehicle battery situations. The ultra−low capacitance and low ESD clamping voltage make this device an ideal solution for protecting voltage sensitive high speed data lines while the low RDS(on) FET limits distortion on the signal lines. The flow−through style package allows for easy PCB layout and matched trace lengths necessary to maintain consistent impedance between high speed differential lines such as USB and LVDS protocols.
Features
• Low Capacitance (0.40 pF Typical, I/O to GND) • Protection for the Following Standards:
IEC 61000−4−2 (Level 4) & ISO 10605
• Integrated MOSFETs for Short−to−Battery and Short−to−Ground
Protection
• NIV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Automotive High Speed Signal Pairs • USB 2.0/3.0 • LVDS • APIX 2/3
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Operating Junction Temperature Range TJ(max) −55 to +150
°C
Storage Temperature Range
TSTG −55 to +150
°C
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
Lead Temperature Soldering
IEC 61000−4−2 Contact (ESD) IEC 61000−4−2 Air (ESD)
VGS
±10
V
TSLD
260
°C
ESD
±8
kV
ESD
±15
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
WDFN10 CASE 511CA
MARKING DIAGRAM
V2 MG G
V2 = Specific Device Code M = Date Code G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONFIGURATION AND SCHEMATICS
10 9 8 7 6
12345 (Top View)
Pin 2 – D+ Host Pin 4 – D−Host
Pin 1 and Pin 10 – Source 1
Pin 3 – 5V
Pin 3 – 5V
Pin 9 – D+ Pin 7 – D−
Pin 3 – 5V
Pin 3 – 5V
Pin 5 and Pin 6 – Source 2
Pin 8 – GND
ORDERING INFORMATION
Device
Package
Shipping†
NIV2161MTTAG NIS2161MTTAG
WDFN10 (Pb−Free)
WDFN10 (Pb−Free)
3000 / Tape & Reel 3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
1
November, 2018 − Rev. 3
Publication Order Number: NIV2161/D
NIV2161, NIS2161
ELECTRICAL CHARACTERISTICS (TA = 25_C unless otherwise specified)
Parameter
Symbol
Conditions
Min Typ Max Unit
Reverse Working Voltage Breakdown Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage (Note 1) Clamping Voltage TLP (Note 2) See Figures 5 & 6
Junction Capacitance Match
VRWM
I/O Pin to GND
16
V
VBR
IT = 1 mA, I/O Pin to GND
16.5 23
V
IR
VRWM = 5 V, I/O Pin to GND
1.0
mA
VC
IPP = 1 A, I/O Pin to GND (8/20 ms pulse)
29
V
VC
IEC61000−4−2, ±8 KV Contact
See Figures 1 & 2
VC
IPP = ±8 A
IPP = ±16 A
39
V
66
V
D CJ
VR = 0 V, f = 1 MHz between I/O 1 to GND
1.0
%
and I/O 2 to GND
Junction Capacitance
CJ
VR = 0 V, f = 1 MHz between I/O Pins and
0.40
pF
GND (Pin 7 to GND, Pin 9 to GND)
Drain−to−Source Breakdown Voltage
VBR(DSS) VGS = 0 V, ID = 100 mA
30
V
Drain−to−Source Breakdown Voltage Temperature Coefficient
VBR(DSS)/ Reference to 25_C, ID = 100 mA TJ
27
mV/_C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 30 V
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±5 V
±1.0
mA
Gate Threshold Voltage (Note 3)
VGS(TH) VDS = VGS, ID = 100 mA
0.1 1.0 1.5
V
Gate Threshold Voltage Temperature Coefficient
VGS(TH)/ TJ
Reference to 25_C, ID = 100 mA
−2.5
mV/_C
Drain−to−Source On Resistance
RDS(on) VGS = 4.5 V, ID = 125 mA
1.4 7.0
W
VGS = 2.5 V, ID = 125 mA
2.3 7.5
Forward Transconductance
gFS
VDS = 3.0 V, ID = 125 mA
80
mS
Switching Turn−On Delay Time (Note 4) Switching Turn−On Rise Time (Note 4)
td(ON) tr
VGS = 4.5 V, VDS = 24 V ID = 125 mA, RG = 10 VW
9
nS
41
nS
Switching Turn−Off Delay Time (Note 4) td(OFF)
96
nS
Switching Turn−Off Fall Time (Note 4)
tf
72
nS
Drain−to−Source Forward Diode Voltage
VSD
VGS = 0 V, Is = 125 mA
0.79 0.9
V
3 dB Bandwidth
fBW
RL = 50 W
5
GHz
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For test procedure see Figures 3 and 4 and application no.