IRF7769L1

IRF7769L1TRPbF Applications RoHS Compliant, Halogen Free  Lead-Free (Qualified up to 260°C Reflow)  Ideal for High Performance Isolated Converter Primary Switch Socket Optimized for Synchronous Rectification Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Industrial Qualified Applicable DirectFET Outline and Substrate Outline  DirectFET™ Power MOSFET Typical values (unless otherwise specified) VDSS 100V min VGS ±20V max RDS(on) 2.8m@ 10V Qg tot Qgd Vgs(th) 200nC 110nC 2.7V S S D G S S S S S D S L8 DirectFET™ ISOMETRIC SB SC M2 M4 L4 L6 L8 Description The IRF7769L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The DirectFET™ package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET™ package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7769L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level ...