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60R070D1 Dataheets PDF



Part Number 60R070D1
Manufacturers Infineon
Logo Infineon
Description Power Transistor
Datasheet 60R070D1 Datasheet60R070D1 Datasheet (PDF)

IGOT60R070D1 IGOT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduc.

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IGOT60R070D1 IGOT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits  Improves system efficiency  Improves power density  Enables higher operating frequency  System cost reduction savings  Reduces EMI 1 1 20 11 20 11 10 10 Gate Drain Kelvin Source Source not connected 9, 10 13,14,15,16,17,18 8 1,2,3,4,5,6,7, heatslug 11,12,19,20 Applications Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support Table 1 Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr Key Performance Parameters at Tj = 25 °C Value Unit 600 V 70 mΩ 5.8 nC 60 A 41 nC 0 nC Table 2 Ordering Information Type / Ordering Code Package IGOT60R070D1 PG-DSO-20-87 Marking 60R070D1 Related links see Appendix A Final Data Sheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Rev. 2.14 2021-10-26 IGOT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor Table of Contents Features…….................................................................................................................................. 1 Benefits…… .................................................................................................................................. 1 Applications ................................................................................................................................... 1 Table of Contents ........................................................................................................................... 2 1 Maximum ratings ........................................................................................................... 3 2 Thermal characteristics.................................................................................................. 4 3 Electrical characteristics ................................................................................................ 5 4 Electrical characteristics diagrams .................................................................................. 7 5 Test Circuits .................................................................................................................13 6 Package Outlines ..........................................................................................................14 7 Appendix A...................................................................................................................15 8 Revision History ...........................................................................................................16 Final Data Sheet 2 Rev. 2.14 2021-10-26 IGOT60R070D1 600V CoolGaN™ enhancement-mode Power Transistor 1 Maximum ratings at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office. Table 3 Maximum ratings Parameter Drain source voltage, continuous 1 Drain source destructive breakdown voltage 2 Drain source voltage, pulsed 2 Switching surge voltage, pulsed 2 Continuous current, drain source Pulsed current, drain source 3 4 Pulsed current, drain source 4 5 Gate current, continuous 4 5 6 Gate current, pulsed 4 6 Gate source voltage, continuous 6 Gate source voltage, pulsed 6 Power dissipation Operating temperature Symbol VDS,max VDS,bd Values Min. Typ. Max. - - 600 800 - - Unit Note/Test Condition V VGS = 0 V V VGS = 0 V, IDS = 12.2 mA VDS,pulse - - 750 V Tj = 25 °C; VGS ≤ 0 V; ≤1 hour of total time - - 650 V Tj = 125 °C, VGS ≤ 0 V; ≤1 hour of total time VDS,surge - - 750 V DC bus voltage = 700 V; turn off VDS,pulse = 750 V; turn on ID,pulse = 27 A; Tj = 105 °C; f ≤ 100 kHz, t ≤ 100 secs (10 million pulses) ID - - 31 A TC = 25 °C; Tj = Tj, max - - 20 TC = 100 °C; Tj = Tj, max - - 14 TC = 125 °C; Tj = Tj, max ID,pulse - - 60 A TC = 25 °C; IG = 26.1 mA; See Figure 3; ID,pulse - - 35 A TC = 125 °C; IG = 26.1 mA; See Figure 4; IG,avg - - 20 mA Tj = -55 °C to 150 °C; IG,pulse - - 2000 mA Tj = -55 °C to 150 °C; tPULSE = 50 ns, f=100 kHz VGS -10 - - V Tj = -55 °C to 150 °C; VGS,pulse -25 - - V Tj = -55 °C to 150 °C; tPULSE = 50 ns, f = 100 kHz; open drain Ptot - - 125 W TC = 25 °C Tj -55 - 150 °C 1 All devices are 100% tested at IDS = 12.2 mA to assure VDS ≥ 800 V 2 Provided as measure of robustness unde.


012N08N5 60R070D1 IPP045N10N3


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