Document
IGOT60R070D1
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Features
Enhancement mode transistor – Normally OFF switch Ultra fast switching No reverse-recovery charge Capable of reverse conduction Low gate charge, low output charge Superior commutation ruggedness Qualified for industrial applications according to JEDEC
Standards (JESD47 and JESD22)
Benefits
Improves system efficiency Improves power density Enables higher operating frequency System cost reduction savings Reduces EMI
1 1
20 11
20 11
10 10
Gate Drain Kelvin Source Source not connected
9, 10 13,14,15,16,17,18
8 1,2,3,4,5,6,7, heatslug
11,12,19,20
Applications
Industrial, telecom, datacenter SMPS based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). For other applications: review CoolGaN™ reliability white paper and contact Infineon regional support
Table 1
Parameter VDS,max RDS(on),max QG,typ ID,pulse Qoss @ 400 V Qrr
Key Performance Parameters at Tj = 25 °C
Value
Unit
600
V
70
mΩ
5.8
nC
60
A
41
nC
0
nC
Table 2
Ordering Information
Type / Ordering Code Package
IGOT60R070D1
PG-DSO-20-87
Marking 60R070D1
Related links see Appendix A
Final Data Sheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Rev. 2.14 2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
Table of Contents
Features…….................................................................................................................................. 1
Benefits…… .................................................................................................................................. 1 Applications ................................................................................................................................... 1
Table of Contents ........................................................................................................................... 2
1
Maximum ratings ........................................................................................................... 3
2
Thermal characteristics.................................................................................................. 4
3
Electrical characteristics ................................................................................................ 5
4
Electrical characteristics diagrams .................................................................................. 7
5
Test Circuits .................................................................................................................13
6
Package Outlines ..........................................................................................................14
7
Appendix A...................................................................................................................15
8
Revision History ...........................................................................................................16
Final Data Sheet
2
Rev. 2.14 2021-10-26
IGOT60R070D1
600V CoolGaN™ enhancement-mode Power Transistor
1
Maximum ratings
at Tj = 25 °C, unless otherwise specified. Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact your local Infineon sales office.
Table 3
Maximum ratings Parameter
Drain source voltage, continuous 1
Drain source destructive breakdown voltage 2 Drain source voltage, pulsed 2
Switching surge voltage, pulsed 2
Continuous current, drain source
Pulsed current, drain source 3 4
Pulsed current, drain source 4 5 Gate current, continuous 4 5 6 Gate current, pulsed 4 6 Gate source voltage, continuous 6 Gate source voltage, pulsed 6
Power dissipation Operating temperature
Symbol
VDS,max VDS,bd
Values
Min. Typ. Max.
-
- 600
800 -
-
Unit Note/Test Condition
V VGS = 0 V V VGS = 0 V, IDS = 12.2 mA
VDS,pulse
-
- 750 V Tj = 25 °C; VGS ≤ 0 V; ≤1 hour
of total time
-
- 650 V Tj = 125 °C, VGS ≤ 0 V; ≤1 hour
of total time
VDS,surge
-
- 750 V DC bus voltage = 700 V; turn
off VDS,pulse = 750 V; turn on
ID,pulse = 27 A; Tj = 105 °C;
f ≤ 100 kHz, t ≤ 100 secs (10
million pulses)
ID
-
-
31
A TC = 25 °C; Tj = Tj, max
-
- 20
TC = 100 °C; Tj = Tj, max
-
- 14
TC = 125 °C; Tj = Tj, max
ID,pulse
-
-
60
A TC = 25 °C; IG = 26.1 mA;
See Figure 3;
ID,pulse
-
-
35
A TC = 125 °C; IG = 26.1 mA;
See Figure 4;
IG,avg
-
-
20 mA Tj = -55 °C to 150 °C;
IG,pulse
-
- 2000 mA Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f=100 kHz
VGS
-10 -
-
V Tj = -55 °C to 150 °C;
VGS,pulse
-25 -
-
V Tj = -55 °C to 150 °C;
tPULSE = 50 ns, f = 100 kHz;
open drain
Ptot
-
- 125 W TC = 25 °C
Tj
-55 - 150 °C
1 All devices are 100% tested at IDS = 12.2 mA to assure VDS ≥ 800 V
2 Provided as measure of robustness unde.