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IRGPS46160D

International Rectifier

Insulated Gate Bipolar Transistor

VCES = 600V IC = 160A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.70V @ IC = 120A Applications • Industrial ...


International Rectifier

IRGPS46160D

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Description
VCES = 600V IC = 160A, TC = 100°C tSC 5µs, TJ(max) = 175°C VCE(on) typ. = 1.70V @ IC = 120A Applications Industrial Motor Drive Inverters UPS Welding Features Low VCE(ON) and Switching Losses Square RBSOA and Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient 5µs short circuit SOA Lead-Free, RoHS compliant IRGPS46160DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C C E C G G E n-channel Super-247 G Gate C Collector E E m itter Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher power capability Excellent current sharing in parallel operation Enables short circuit protection scheme Environmentally friendly Base part number IRGPS46160DPbF Package Type Super-247 Standard Pack Form Quantity Tube 25 Orderable part number IRGPS46160DPbF Absolute Maximum Ratings Parameter VCES Collector-to-Emitter Voltage IC @ TC = 25°C Continuous Collector Current IC @ TC = 100°C Continuous Collector Current ICM Pulse Collector Current, VGE = 15V ILM Clamped Inductive Load Current, VGE = 20V  IF @ TC = 25°C Diode Continous Forward Current IF @ TC = 100°C IFM Diode Continous Forward Current Diode Maximum Forward Current  VGE Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junc...




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