IDWD40G120C5

IDWD40G120C5 IGC13R65U8W2 IGC13R65U8W2 IGC13R65U8W2 IGC513thR6G5eUn8Wer2ation CoolSiCTM 1200V Schottky Diode IGCS1i3CRD6i5odUe8W2 Features  No reverse recovery current / no forward recovery  High surge current capability  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Specified dv/dt ruggedness  Pb-free lead plating; RoHS compliant 1 2 Pin definition Potential applications Pin 1 and backside: Cathode 1  Industrial power supplies: Industrial UPS  Infrastructure-Charge: Charger  Metal treatment: Welding  Solar central inverters, Solar string inverter and Solar optimizer Pin 2: Anode 2 Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Description  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  Related Links: www.infineon.com/SiC CASE Key performance parameters Type IDWD40G120C5 VDC IF 1200 V 40 A QC 202nC Tvj,max 175°C Marking D4012C5 Package PG-TO247-2 Datasheet Please read the Important Notice and Warnings at the end of this document www.infineon.com page 1 of 12 V 2.1 2021-03-01 5th Generation CoolSiCTM 1200V Schottky Diod...