1530-1

SD1530-01 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS . . . . . . . . . DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS 40 WATTS (typ.) IFF 1030 - 1090 MHz 35 WATTS (min.) DME 1025 - 1150 MHz 25 WATTS (typ.) TACAN 960 - 1215 MHz 9.0 dB MIN. GAIN REFRACTORY GOLD METALLIZATION EMITTER BALLASTING AND LOW THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS INFINITE LOAD VSWR CAPABILITY AT SPECIFIED OPERATING CONDITIONS INPUT MATCHED, COMMON BASE CONFIGURATION .280 4LSL (M115) epoxy sealed ORDER CODE SD1530-01 BRANDING 1530-1 PIN CONNECTION DESCRIPTION The SD1530-01 is a gold metallized silicon, NPN power transistor designed for applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-01 is packaged in the .280” input matched stripline package resulting in improved broadband performance and a low thermal resistance. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base VCBO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 65 65 3.5 2.6 87.5 +200 − 65 to +150 V V V A W °C °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance October 11, 1993 2.0 °C/W rev. 1 1/3 SD1530-01 ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVCES BVEBO I CBO hFE IC = 20mA IC = 20mA IE = 2mA VCB ...