Document
May 2015
MMK200T160UX
1600V 200A Three Phase Diode+Thyristor Module
Version 01
RoHS Compliant
PRODUCT FEATURES
Isolated Module Package Isolation voltage 3000 V Three Phase Bridge and a Thyristor
APPLICATIONS
Current Stabilized Power Supply Switching Power Supply Inverter For AC or DC Motor Control
ABSOLUTE MAXIMUM RATINGS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Values
VRRM VDRM VRSM IT(AV) IT(RMS)
Repetitive Peak Reverse Voltage
Repetitive Peak Off-State Voltage
Non-Repetitive Peak Reverse Voltage
Average On State Current R.M.S. On State Current
Single phase, half wave, 180°conduction, Tc=85℃
1600 1600 1700 200 314
ITSM
Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃
I2t
For Fusing
1/2 cycle, 50/60HZ, peak value ,Tc =45℃
3500/3850 61.2/61.5
TJ
Junction Temperature(Thyristor)
-40 to +125
Unit
V
A KA2S
℃
ABSOLUTE MAXIMUM RATINGS (Three Phase Diode)
Symbol
Parameter/Test Conditions
VRRM VRSM ID IFSM I2t
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Output Current(D.C.)
Three phase, half wave, Tc= 95°C
Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃
For Fusing
1/2 cycle, 50/60HZ, peak value ,Tc =45℃
TJ
Junction Temperature(Diode)
Values Unit
1600
V
1700
200 A
2200/2400
24.2/24 KA2S
-40 to +150 ℃
MacMic Science & Technology Co., Ltd.
Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com
1
MMK200T160UX
ELECTRICAL CHARACTERISTICS (Thyristor)
T C =25°C unless otherwise specified
Symbol
Parameter/Test Conditions
Min. Typ. Max. Unit
IDRM IRRM
Maximum Peak Off-State Current Maximum Peak Reverse Current
VD = VDRM, TJ = 125℃ VR = VRRM, TJ = 125℃
25 mA 25
VTM
Maximum on-state voltage drop
ITM=500A,td=10 ms, half sine
1.55 V
VTO
For power-loss calculations only
rT
TJ = 125℃
0.88 V 1.4 mΩ
VA=6V, RA=1Ω,TJ = -40℃
4.0
VGT
Max. required DC gate voltage to trigger VA=6V, RA=1Ω
1.0 2.5 V
VA=6V, RA=1Ω,TJ = 125℃
1.7
VA=6V, RA=1Ω,TJ = -40℃
270
IGT
Max. required DC gate current to trigger VA=6V, RA=1Ω
75 150 mA
VA=6V, RA=1Ω,TJ = 125℃
80
VGD
Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃
0.25 V
IGD
Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃
6 mA
IH
Maximum holding current
100 200 mA
IL
Maximum latching current
200 400 mA
PGM PG(AV)
Maximum peak gate power Maximum average gate power
12 W
3.0
IGM
Maximum peak gate current
3.0 A
-VGM
Maximum peak negative gate voltage
10 V
dv/dt
Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated VDRM
1000 V/μs
di/dt
Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=500A, rated VDRM
150 A/μs
Rth(J-C) Junction-to-Case Thermal Resistance
0.14 K /W
ELECTRICAL CHARACTERISTICS (Three Phase Diode)
Symbol
Parameter/Test Conditions
IRM
Maximum Reverse Leakage Current
VR = VRRM VR = VRRM, TJ = 125℃
VF
Forward Voltage Drop
IF=200A
VTO rT
For power-loss calculations only , TJ = 125°C
Rth(J-C) Junction-to-Case Thermal Resistance
per diode per module
Min.
Typ.
Max. Unit
0.5 mA
10 1.35 V 0.89 V 2.2 mΩ 0.6
K /W 0.1
2
MODULE CHARACTERISTICS
TJ TSTG VISO
Junction Temperature Storage Temperature Range Isolation Breakdown Voltage to heatsink
Torque to terminal
to terminal
Weight
MMK200T160UX
T C =25°C unless otherwise specified
-40 to +125 ℃
-40 to +125 ℃
AC, 50Hz(R.M.S), t=1minute
3000
V
Recommended(M6)
3~5
Nm
Recommended(M6)
3~5
Nm
Recommended(M4)
1~2
Nm
350
g
500 25℃
400
300
IT(A)
200
max.
100
0 0 0.5 1 1.5 2 2.5 VTM(V)
Figure1. Forward Voltage Drop vs Forward Current
ITSM (A)
3500 3000 2500 2000 1500 1000
500 0 1
50HZ
10
100
Cycles
Figure3. SCR Max Non-Repetitive Surge Current
IT(A)
PAV (W)
300
250
180°
120° 200
150
100
DC
50
0 0
θ:Conduction Angle
50
100 150 200
IT(A)
Figure2. Power dissipation vs. IT
250 180°Conduction Angle
200
150
100
50
0 0 25 50 75 100 125 150 TC(℃)
Figure4. SCR IT(AV)vs.TC
3
400
300
25℃
IF(AV)(A)
200
Max. 100
0 0 0.5 1 1.5 2 2.5 VF(V)
Figure5. Forward Voltage Drop vs Forward Current
2500
2000 1500
50HZ
IFSM(A)
1000
500
0
1
10
100
Cycles
Figure7. Diode Max Non-Repetitive Surge Current
1
ID(A)
PAV (W)
MMK200T160UX
600
500
Three-Phase
400
300
200 Max.
100
0
0
50
100 150 200
ID(A)
Figure6. Power dissipation vs. ID
250
200
DC
150
100
50
0 25 50 75 100 125 150 TC(℃)
Figure8. Output current vs.Case temperature
ZthJC (K/W)
0.1 0.01
Thyristor Diode
0.001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (S)
Figure9. Transient Thermal Impedance of Per Diode and SCR
4
Instantaneous Gate Voltage (V)
MMK200T160UX
100
Rectangular gate pulse
a)Recommend.