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MMK200T160UX Dataheets PDF



Part Number MMK200T160UX
Manufacturers MacMic
Logo MacMic
Description 1600V 200A Three Phase Diode+Thyristor
Datasheet MMK200T160UX DatasheetMMK200T160UX Datasheet (PDF)

May 2015 MMK200T160UX 1600V 200A Three Phase Diode+Thyristor Module Version 01 RoHS Compliant PRODUCT FEATURES Isolated Module Package Isolation voltage 3000 V Three Phase Bridge and a Thyristor APPLICATIONS Current Stabilized Power Supply Switching Power Supply Inverter For AC or DC Motor Control ABSOLUTE MAXIMUM RATINGS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VRRM VDRM VRSM IT(AV) IT(RMS) Repetitive Peak Reverse Voltage Repetitive .

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May 2015 MMK200T160UX 1600V 200A Three Phase Diode+Thyristor Module Version 01 RoHS Compliant PRODUCT FEATURES Isolated Module Package Isolation voltage 3000 V Three Phase Bridge and a Thyristor APPLICATIONS Current Stabilized Power Supply Switching Power Supply Inverter For AC or DC Motor Control ABSOLUTE MAXIMUM RATINGS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Values VRRM VDRM VRSM IT(AV) IT(RMS) Repetitive Peak Reverse Voltage Repetitive Peak Off-State Voltage Non-Repetitive Peak Reverse Voltage Average On State Current R.M.S. On State Current Single phase, half wave, 180°conduction, Tc=85℃ 1600 1600 1700 200 314 ITSM Non-Repetitive Surge On-State Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ I2t For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ 3500/3850 61.2/61.5 TJ Junction Temperature(Thyristor) -40 to +125 Unit V A KA2S ℃ ABSOLUTE MAXIMUM RATINGS (Three Phase Diode) Symbol Parameter/Test Conditions VRRM VRSM ID IFSM I2t Repetitive Peak Reverse Voltage Non-Repetitive Peak Reverse Voltage Output Current(D.C.) Three phase, half wave, Tc= 95°C Non-Repetitive Surge Forward Current 1/2 cycle, 50/60HZ, peak value, Tc =45℃ For Fusing 1/2 cycle, 50/60HZ, peak value ,Tc =45℃ TJ Junction Temperature(Diode) Values Unit 1600 V 1700 200 A 2200/2400 24.2/24 KA2S -40 to +150 ℃ MacMic Science & Technology Co., Ltd. Add:#18, Hua Shan Zhong Lu, New District, Changzhou City, Jia ngsu Province, P. R .of China Tel.:+86-519-85163708 Fax:+86-519-85162291 Post Code:213022 Website:www.macmicst.com 1 MMK200T160UX ELECTRICAL CHARACTERISTICS (Thyristor) T C =25°C unless otherwise specified Symbol Parameter/Test Conditions Min. Typ. Max. Unit IDRM IRRM Maximum Peak Off-State Current Maximum Peak Reverse Current VD = VDRM, TJ = 125℃ VR = VRRM, TJ = 125℃ 25 mA 25 VTM Maximum on-state voltage drop ITM=500A,td=10 ms, half sine 1.55 V VTO For power-loss calculations only rT TJ = 125℃ 0.88 V 1.4 mΩ VA=6V, RA=1Ω,TJ = -40℃ 4.0 VGT Max. required DC gate voltage to trigger VA=6V, RA=1Ω 1.0 2.5 V VA=6V, RA=1Ω,TJ = 125℃ 1.7 VA=6V, RA=1Ω,TJ = -40℃ 270 IGT Max. required DC gate current to trigger VA=6V, RA=1Ω 75 150 mA VA=6V, RA=1Ω,TJ = 125℃ 80 VGD Max. required DC gate voltage not to trigger,VD = VDRM, TJ = 125℃ 0.25 V IGD Max. required DC gate current not to trigger,VD = VDRM, TJ = 125℃ 6 mA IH Maximum holding current 100 200 mA IL Maximum latching current 200 400 mA PGM PG(AV) Maximum peak gate power Maximum average gate power 12 W 3.0 IGM Maximum peak gate current 3.0 A -VGM Maximum peak negative gate voltage 10 V dv/dt Critical Rate of Rise of Off-State Voltage,TJ=125℃,exponential to 67% rated VDRM 1000 V/μs di/dt Max.Rate of Rise of Turned-on Current, TJ =125℃,ITM=500A, rated VDRM 150 A/μs Rth(J-C) Junction-to-Case Thermal Resistance 0.14 K /W ELECTRICAL CHARACTERISTICS (Three Phase Diode) Symbol Parameter/Test Conditions IRM Maximum Reverse Leakage Current VR = VRRM VR = VRRM, TJ = 125℃ VF Forward Voltage Drop IF=200A VTO rT For power-loss calculations only , TJ = 125°C Rth(J-C) Junction-to-Case Thermal Resistance per diode per module Min. Typ. Max. Unit 0.5 mA 10 1.35 V 0.89 V 2.2 mΩ 0.6 K /W 0.1 2 MODULE CHARACTERISTICS TJ TSTG VISO Junction Temperature Storage Temperature Range Isolation Breakdown Voltage to heatsink Torque to terminal to terminal Weight MMK200T160UX T C =25°C unless otherwise specified -40 to +125 ℃ -40 to +125 ℃ AC, 50Hz(R.M.S), t=1minute 3000 V Recommended(M6) 3~5 Nm Recommended(M6) 3~5 Nm Recommended(M4) 1~2 Nm 350 g 500 25℃ 400 300 IT(A) 200 max. 100 0 0 0.5 1 1.5 2 2.5 VTM(V) Figure1. Forward Voltage Drop vs Forward Current ITSM (A) 3500 3000 2500 2000 1500 1000 500 0 1 50HZ 10 100 Cycles Figure3. SCR Max Non-Repetitive Surge Current IT(A) PAV (W) 300 250 180° 120° 200 150 100 DC 50 0 0 θ:Conduction Angle 50 100 150 200 IT(A) Figure2. Power dissipation vs. IT 250 180°Conduction Angle 200 150 100 50 0 0 25 50 75 100 125 150 TC(℃) Figure4. SCR IT(AV)vs.TC 3 400 300 25℃ IF(AV)(A) 200 Max. 100 0 0 0.5 1 1.5 2 2.5 VF(V) Figure5. Forward Voltage Drop vs Forward Current 2500 2000 1500 50HZ IFSM(A) 1000 500 0 1 10 100 Cycles Figure7. Diode Max Non-Repetitive Surge Current 1 ID(A) PAV (W) MMK200T160UX 600 500 Three-Phase 400 300 200 Max. 100 0 0 50 100 150 200 ID(A) Figure6. Power dissipation vs. ID 250 200 DC 150 100 50 0 25 50 75 100 125 150 TC(℃) Figure8. Output current vs.Case temperature ZthJC (K/W) 0.1 0.01 Thyristor Diode 0.001 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (S) Figure9. Transient Thermal Impedance of Per Diode and SCR 4 Instantaneous Gate Voltage (V) MMK200T160UX 100 Rectangular gate pulse a)Recommend.


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