MMN400A010U1

August 2016 MMN400A010U1 100V 400A N-ch Power MOSFET Module Preliminary RoHS Compliant PRODUCT FEATURES □ RDS(ON).typ=1.1mΩ@VGS=10V □ 175℃operating temperature □ Low Gate Charge Minimize Switching Loss □ Fast Recovery body Diode □ 20K Ω Gate Protected Resistance Inside □ Inside the module,each MOSFET chip has a gate resistance:2.2Ω APPLICATIONS □ High efficiency DC/DC Converters □ ISG EV Products □ UPS inverter Type MMN400A010U1 VDS 100V ID 400A RDS(ON).max TJ=25℃ 1.4mΩ TJmax 175℃ Marking MMN400A010U1 Package NA ABSOLUTE MAXIMUM RATINGS(T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions VDSS VGSS Drain - Source Voltage Gate - Source Voltage TJ=25℃ ID Continuous Drain Current IDM Pulsed Drain Current at VGS=10V TC=25℃, TJmax=175℃ TC=100℃, TJmax=175℃ Limited by TJmax PD Maximum Power Dissipation EAS Single Pulse Avalanche Energy TC=25℃, TJmax=175℃ VDD=50V,L=1mH Values Unit 100 V ±20 550 400 A 800 1071 W 3000 mJ THERMAL AND MODULE CHARACTERISTICS (T C =25°C unless otherwise specified) Symbol Parameter/Test Conditions RthJC Thermal resistance,junction to case Per MOSFET Values Unit 0.14 K/W TJmax TSTG Max. Junction Temperature Storage Temperature Range 175 ℃ -40～125 to heatsink Torque to terminal Recommended（M5） Recommended（M5） 2.5～5 Nm 2.5～5 Weight 110 g MacMic Science & Technology Co., Ltd. Add：#18, Hua Shan Zhong Lu, New District, Changzhou City, Jiangsu Province, P. R .of China 1 Tel.：+86-519-851...