D0212C5

Diode Silicon Carbide Schottky Diode IDM02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Data Sheet Rev. 2.1, 2021-06-09 Industrial Power Control IDM02G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode CoolSiCTM SiC Schottky Diode Features:  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / No forward recovery  Temperature independent switching behavior  Low forward voltage even at high operating temperature  Tight forward voltage distribution  Excellent thermal performance  Extended surge current capability  Specified dv/dt ruggedness  Qualified according to JEDEC1) for target applications  Pb-free lead plating; RoHS compliant Benefits 1 2  System efficiency improvement over Si diodes  Enabling higher frequency / increased power density solutions  System size/cost savings due to reduced heatsink requirements and smaller magnetics  Reduced EMI  Highest efficiency across the entire load range  Robust diode operation during surge events  High reliability  RelatedLinks: www.infineon.com/sic Applications  Solar inverters  Uninterruptable power supplies  Motor drives  Power Factor Correction Package pin definitions  Pin 1 and backside – cathode  Pin 2 – anode Key Performance and Package Parameters Type VDC IF IDM02G120C5 1200V 2A 1) J-STD20 and JESD22 Final Data Sheet QC 14nC Tj,max Marking 175°C D0212C5 Package PG-TO252-2 2 Rev.2.1, 2021-06-09 IDM02G120C5 5th Generation CoolSiC...