FQU2N60C

MOSFET – N-Channel, QFET) 600 V, 1.9 A, 4,7 W FQD2N60C / FQU2N60C This N−Channel enhancement mode power MOSFET is produced using onsemi’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on−state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features 1.9 A, 600 V, RDS(on) = 4.7 W (Max.) @ VGS = 10 V, ID = 0.95 A Low Gate Charge (Typ. 8.5 nC) Low Crss (Typ. 4.3 pF) 100% Avalanche Tested These Devices are Halid Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Rating Value Unit VDSS Drain−Source Voltage 600 V ID Drain Current − Continuous (TC = 25°C) 1.9 A − Continuous (TC = 100°C) 1.14 IDM Drain Current − Pulsed (Note 1) 7.6 VGSS Gate−Source Voltage ±30 EAS Single Pulsed Avalanche Energy (Note 2) 120 IAR Avalanche Current (Note 1) 1.9 EAR Repetitive Avalanche Energy (Note 1) 4.4 dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 A V mJ A mJ V/ns PD Power Dissipation (TA = 25°C) * Power Dissipation (TC = 25°C) − Derate above 25°C 2.5 W 44 W 0.35 W/°C TJ, TSTG Operating and Storage Temperature Range −55 to °C +150 TL Maximum Lead Temperature for Soldering Purposes, 1/8” (from case for 5 seconds) 300 °C Stresses exceeding those listed in the Maximum ...