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Schottky Diode. MBRH24080R Datasheet

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Schottky Diode. MBRH24080R Datasheet






MBRH24080R Diode. Datasheet pdf. Equivalent




MBRH24080R Diode. Datasheet pdf. Equivalent





Part

MBRH24080R

Description

Silicon Power Schottky Diode



Feature


Silicon Power Schottky Diode Features High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitiv e MBRH24045 thru MBRH240100R VRRM = 45 V - 100 V IF(AV) = 240 A D-67 Package Maximum ratings, at Tj = 25 °C, unles s otherwise specified ("R" devices have leads reversed) Parameter Symbol Con ditions MBRH24045(R) MBRH24060(R) MBRH 24080(R) MBRH240100(R) Un.
Manufacture

GeneSiC

Datasheet
Download MBRH24080R Datasheet


GeneSiC MBRH24080R

MBRH24080R; it Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Ope rating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 60 80 100 V 32 42 57 70 V 45 60 80 100 V -55 to 150 -55 to 150 -55 to 150 -55 to 150 °C -55 to 150 -55 to 1 50 -55 to 150 -55 to 150 °C Electr ical characteristics, at Tj = 25 °C, u nless otherwise speci.


GeneSiC MBRH24080R

fied Parameter Symbol Conditions MBRH 24045(R) MBRH24060(R) MBRH24080(R) MBRH 240100(R) Unit Average forward current (per pkg) IF(AV) TC = 125 °C 240 240 240 240 A Peak forward surge cu rrent IFSM tp = 8.3 ms, half sine 3300 3300 3300 3300 A Maximum instanta neous forward voltage VF IFM = 240 A, Tj = 25 °C 0.72 0.78 Maximum instan taneous Tj = 25 °C .


GeneSiC MBRH24080R

1 1 reverse current at rated DC IR T j = 100 °C 10 10 blocking voltage Tj = 150 °C 50 50 Thermal character istics Thermal resistance, junctioncas e RΘJC 0.30 0.30 0.84 1 10 50 0.30 0.84 V 1 10 mA 50 0.30 °C/W Oct. 2018 http://www.diodemodule.com/s ilicon_products/modules/mbrh240100.pdf 1 MBRH24045 thru MBRH240100R Oct. 20 18 http://www.diodemo.

Part

MBRH24080R

Description

Silicon Power Schottky Diode



Feature


Silicon Power Schottky Diode Features High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitiv e MBRH24045 thru MBRH240100R VRRM = 45 V - 100 V IF(AV) = 240 A D-67 Package Maximum ratings, at Tj = 25 °C, unles s otherwise specified ("R" devices have leads reversed) Parameter Symbol Con ditions MBRH24045(R) MBRH24060(R) MBRH 24080(R) MBRH240100(R) Un.
Manufacture

GeneSiC

Datasheet
Download MBRH24080R Datasheet




 MBRH24080R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
• Not ESD Sensitive
MBRH24045 thru MBRH240100R
VRRM = 45 V - 100 V
IF(AV) = 240 A
D-67 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol Conditions
MBRH24045(R) MBRH24060(R) MBRH24080(R) MBRH240100(R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
VRRM
VRMS
VDC
Tj
Tstg
45
60
80
100
V
32
42
57
70
V
45
60
80
100
V
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
-55 to 150
-55 to 150
-55 to 150
-55 to 150
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
MBRH24045(R) MBRH24060(R) MBRH24080(R) MBRH240100(R) Unit
Average forward current
(per pkg)
IF(AV)
TC = 125 °C
240
240
240
240
A
Peak forward surge current IFSM tp = 8.3 ms, half sine
3300
3300
3300
3300
A
Maximum instantaneous
forward voltage
VF IFM = 240 A, Tj = 25 °C
0.72
0.78
Maximum instantaneous
Tj = 25 °C
1
1
reverse current at rated DC IR
Tj = 100 °C
10
10
blocking voltage
Tj = 150 °C
50
50
Thermal characteristics
Thermal resistance, junction-
case
RΘJC
0.30
0.30
0.84
1
10
50
0.30
0.84
V
1
10
mA
50
0.30
°C/W
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbrh240100.pdf
1




 MBRH24080R
MBRH24045 thru MBRH240100R
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbrh240100.pdf
2




 MBRH24080R
MBRH24045 thru MBRH240100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
Oct. 2018
http://www.diodemodule.com/silicon_products/modules/mbrh240100.pdf
3



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