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BANDWIDTH SWITCH. QS3VH126 Datasheet

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BANDWIDTH SWITCH. QS3VH126 Datasheet






QS3VH126 SWITCH. Datasheet pdf. Equivalent




QS3VH126 SWITCH. Datasheet pdf. Equivalent





Part

QS3VH126

Description

HIGH BANDWIDTH SWITCH



Feature


IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH , HIGH BANDWIDTH SWITCH INDUSTRIAL TEM PERATURE RANGE QUICKSWITCH® PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BAND WIDTH SWITCH IDTQS3VH126 FEATURES: N channel FET switches with no parasi tic diode to VCC – Isolation under po wer-off conditions – No DC path to VC C or GND – 5V tolerant in OFF and ON state • 5V tolerant I/Os • .
Manufacture

Renesas

Datasheet
Download QS3VH126 Datasheet


Renesas QS3VH126

QS3VH126; Low RON - 4Ω typical • Flat RON chara cteristics over operating range • Rai l-to-rail switching 0 - 5V • Bidirect ional dataflow with near-zero delay: no added ground bounce • Excellent RON matching between channels • VCC opera tion: 2.3V to 3.6V • High bandwidth - up to 500MHz • LVTTL-compatible cont rol Inputs • Undershoot Clamp Diodes on all switch and control Inputs • .


Renesas QS3VH126

Low I/O capacitance, 4pF typical • Ava ilable in QSOP and SOIC packages APPLIC ATIONS: • Hot-swapping • 10/100 Bas e-T, Ethernet LAN switch • Low distor tion analog switch • Replaces mechani cal relay • ATM 25/155 switching FUNC TIONAL BLOCK DIAGRAM DESCRIPTION: The QS3VH126 is a high bandwidth bus switch . The QS3VH126 has very low ON resistan ce, resulting in under 250ps p.


Renesas QS3VH126

ropagation delay through the switch. The switches can be turned ON under the co ntrol of individual LVTTL-compatible ac tive high Output Enable signals for bid irectional data flow with no added dela y or ground bounce. In the ON state, th e switches can pass signals up to 5V. I n the OFF state, the switches offer ver y high impedence at the terminals. The combination of nea.

Part

QS3VH126

Description

HIGH BANDWIDTH SWITCH



Feature


IDTQS3VH126 2.5V / 3.3V QUAD ACTIVE HIGH , HIGH BANDWIDTH SWITCH INDUSTRIAL TEM PERATURE RANGE QUICKSWITCH® PRODUCTS 2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BAND WIDTH SWITCH IDTQS3VH126 FEATURES: N channel FET switches with no parasi tic diode to VCC – Isolation under po wer-off conditions – No DC path to VC C or GND – 5V tolerant in OFF and ON state • 5V tolerant I/Os • .
Manufacture

Renesas

Datasheet
Download QS3VH126 Datasheet




 QS3VH126
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
QUICKSWITCH® PRODUCTS
2.5V / 3.3V QUAD ACTIVE
HIGH, HIGH BANDWIDTH SWITCH
IDTQS3VH126
FEATURES:
• N channel FET switches with no parasitic diode to VCC
– Isolation under power-off conditions
– No DC path to VCC or GND
– 5V tolerant in OFF and ON state
• 5V tolerant I/Os
• Low RON - 4Ω typical
• Flat RON characteristics over operating range
• Rail-to-rail switching 0 - 5V
• Bidirectional dataflow with near-zero delay: no added ground
bounce
• Excellent RON matching between channels
• VCC operation: 2.3V to 3.6V
• High bandwidth - up to 500MHz
• LVTTL-compatible control Inputs
• Undershoot Clamp Diodes on all switch and control Inputs
• Low I/O capacitance, 4pF typical
• Available in QSOP and SOIC packages
APPLICATIONS:
• Hot-swapping
• 10/100 Base-T, Ethernet LAN switch
• Low distortion analog switch
• Replaces mechanical relay
• ATM 25/155 switching
FUNCTIONAL BLOCK DIAGRAM
DESCRIPTION:
The QS3VH126 is a high bandwidth bus switch. The QS3VH126 has
very low ON resistance, resulting in under 250ps propagation delay
through the switch. The switches can be turned ON under the control
of individual LVTTL-compatible active high Output Enable signals for
bidirectional data flow with no added delay or ground bounce. In the ON
state, the switches can pass signals up to 5V. In the OFF state, the
switches offer very high impedence at the terminals.
The combination of near-zero propagation delay, high OFF imped-
ance, and over-voltage tolerance makes the QS3VH126 ideal for high
performance communications applications.
The QS3VH126 is characterized for operation from -40°C to +85°C.
1A 2A 3A 4A
1OE
2OE
3OE
4OE
The IDT logo is a registered trademark of Integrated Device Technology, Inc.
INDUSTRIAL TEMPERATURE RANGE
c 2013 Integrated Device Technology, Inc.
1Y 2Y 3Y 4Y
JANUARY 2013
1
DSC-5774/13




 QS3VH126
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
PIN CONFIGURATION
NC 1
1OE 2
1A
3
1Y
4
2OE 5
2A
6
2Y
7
GND 8
16
VCC
15 4OE
14 4A
13 4Y
12 3OE
11 3A
10
3Y
9 NC
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Description
Max
Unit
VTERM(2) SupplyVoltage to Ground
–0.5 to +4.6 V
VTERM(3) DC Switch Voltage VS
–0.5 to +5.5 V
VTERM(3) DC Input Voltage VIN
–0.5 to +5.5 V
VAC
AC Input Voltage (pulse width 20ns)
–3
V
IOUT
DC Output Current (max. sink current/pin)
120
mA
TSTG Storage Temperature
–65 to +150 °C
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of
the device at these or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
2. VCC terminals.
3. All terminals except VCC .
QSOP
TOP VIEW
CAPACITANCE (TA = +25°C, F = 1MHz, VIN = 0V, VOUT =
0SVy) mbol
Parameter(1)
Typ. Max. Unit
CIN
Control Inputs
3
5
pF
CI/O
Quickswitch Channels (Switch OFF) 4
6
pF
CI/O
Quickswitch Channels (Switch ON)
8
12 pF
NOTE:
1. This parameter is guaranteed but not production tested.
1OE 1
1A
2
1Y
3
2OE 4
2A
5
2Y
6
GND 7
14
VCC
13 4OE
12
4A
11
4Y
10 3OE
9
3A
8
3Y
SOIC
TOP VIEW
PIN DESCRIPTION
Pin Names
I/O
Description
1A - 4A
I/O
Bus A
1Y - 4Y
I/O
Bus Y
1OE - 4OE
I
Output Enable
FUNCTION TABLE(1)
OE
A
Y
H
H
H
H
L
L
L
X
X
NOTE:
1. H = HIGH Voltage Level
L = LOW Voltage Level
X = Don't Care
Function
Connect
Connect
Disconnect
2




 QS3VH126
IDTQS3VH126
2.5V / 3.3V QUAD ACTIVE HIGH, HIGH BANDWIDTH SWITCH
INDUSTRIAL TEMPERATURE RANGE
DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE
Following Conditions Apply Unless Otherwise Specified:
Industrial: TA = –40°C to +85°C, VCC = 3.3V ±0.3V
Symbol
Parameter
Test Conditions
Min. Typ.(1) Max. Unit
VIH
Input HIGH Voltage
Guaranteed Logic HIGH VCC = 2.3V to 2.7V
1.7
——
V
for Control Inputs
VCC = 2.7V to 3.6V
2
——
VIL
Input LOW Voltage
Guaranteed Logic LOW VCC = 2.3V to 2.7V
— 0.7
V
for Control Inputs
VCC = 2.7V to 3.6V
— 0.8
IIN
Input Leakage Current (Control Inputs) 0V VIN VCC
— ±1 μA
IOZ
Off-State Current (Hi-Z)
0V VOUT 5V, Switches OFF
— ±1 μA
IOFF
Data Input/Output Power Off Leakage VIN or VOUT 0V to 5V, VCC = 0V
— ±1 μA
VCC = 2.3V
VIN = 0V
ION = 30mA
68
RON Switch ON Resistance
Typical at VCC = 2.5V
VIN = 1.7V
ION = 15mA
79
Ω
VCC = 3V
VIN = 0V
ION = 30mA
46
VIN = 2.4V
ION = 15mA
58
NOTE:
1. Typical values are at VCC = 3.3V and TA = 25°C.
TYPICAL ON RESISTANCE vs VIN AT VCC = 3.3V
16
14
RON 12
(ohms) 10
8
6
4
2
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VIN
(Volts)
3



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