NPT Trench IGBT
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
• NPT Trench Techn...
Description
FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT
FGA25N120ANTDTU
1200 V, 25 A NPT Trench IGBT
Features
NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: VCE(sat), typ = 2.0 V
@ IC = 25 A and TC = 25°C Low Switching Loss: Eoff, typ = 0.96 mJ
@ IC = 25 A and TC = 25°C Extremely Enhanced Avalanche Capability
Applications
Induction Heating, Microwave Oven
Description
Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven.
C
GCE
TO-3P
Absolute Maximum Ratings
Symbol
Description
VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current Collector Current Pulsed Collector Current
@ TC = 25°C @ TC = 100°C
Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current
@ TC = 25°C @ TC = 100°C
Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature
@ TC = 25°C @ TC = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds
Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT) RθJC(DIODE) RθJA
Parameter
Thermal Resistance, Junction-to-Case Ther...
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