FGA25N120ANTDTU

FGA25N120ANTDTU — 1200 V, 25 A NPT Trench IGBT FGA25N120ANTDTU 1200 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: VCE(sat), typ = 2.0 V @ IC = 25 A and TC = 25°C Low Switching Loss: Eoff, typ = 0.96 mJ @ IC = 25 A and TC = 25°C Extremely Enhanced Avalanche Capability Applications Induction Heating, Microwave Oven Description Using ON Semiconductor's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the reso-nant or soft switching application such as induction heating, microwave oven. C GCE TO-3P Absolute Maximum Ratings Symbol Description VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 25°C @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Ther...