isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SC6093
DESCRIPTION ·Low saturation voltage ·Built-in damper d...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC6093
DESCRIPTION ·Low saturation voltage ·Built-in damper diode type ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high voltage color display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
800
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
5
A
IB
Base Current- Continuous
2
A
ICP
Collector Current-Pulse
Collector Power Dissipation @ Ta=25℃
PC Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
12
A
2 W
25
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SC6093
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.35A; IB= 0.27A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A
VBE(sat) Base-Emitter Saturation Voltage
IC= 2.7A; IB= 0.54A
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 4V; IC= 0
hFE-1
DC Current Gain
IC=0.5A; VCE= 5V
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
0.1
0.3
V
2.0
V
1.5
V
10 μA
40
130 mA
10
5.3
7.5
NOTICE： ISC rese...
