Freescale Semiconductor Technical Data
RF Power LDMOS Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral ...
Freescale Semiconductor Technical Data
RF Power LDMOS
Transistors
High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
Typical Performance: 12.5 V, TA = 25C, CW
Gps
D
Pout
Frequency
(dB)
(%)
(W)
136 MHz
21.0
68.0
76
450--520 MHz (1)
14.6
65.8
75
520 MHz (2)
18.5
68.5
70
Load Mismatch/Ruggedness
Frequency Signal
(MHz)
Type
VSWR
Pin
Test
(W)
Voltage
Result
520 (2)
CW > 65:1 at all
2
Phase Angles (3 dB Overdrive)
17
No Device
Degradation
1. Measured in 450--520 MHz UHF broadband reference circuit. 2. Measured in 520 MHz narrowband test circuit.
Features
Characterized for Operation from 136 to 520 MHz Unmatched Input and Output Allowing Wide Frequency Range Utilization Integrated ESD Protection Integrated Stability Enhancements Wideband — Full Power Across the Band Exceptional Thermal Performance Extreme Ruggedness High Linearity for: TETRA, SSB, LTE In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel.
Typical Applications
Output Stage VHF Band Mobile Radio Output Stage UHF Band Mobile Radio
Document Number: AFT05MP075N Rev. 1, 8/2014
AFT05MP075NR1 AFT05MP075GNR1
136–520 MHz, 70 W, 12.5 V BROADBAND
RF POWER LDMOS
TRANSISTORS
TO--270WB--...