DatasheetsPDF.com

TXS4555 Dataheets PDF



Part Number TXS4555
Manufacturers Texas Instruments
Logo Texas Instruments
Description 1.8V/3V SIM-Card PowerSupply
Datasheet TXS4555 DatasheetTXS4555 Datasheet (PDF)

TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range from 2.3 to 5.5V • Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – 2.3-V to 5.5-V Input Voltage Range – Very Low Dropout: 100mV (Max) at 50mA • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7.

  TXS4555   TXS4555


Document
TXS4555 www.ti.com SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 1.8V/3V SIM Card Power Supply With Level Translator Check for Samples: TXS4555 FEATURES 1 • Level Translator – VCC Range of 1.65 V to 3.3 V – VBATT Range from 2.3 to 5.5V • Low-Dropout (LDO) Regulator – 50-mA LDO Regulator With Enable – 1.8-V or 2.95-V Selectable Output Voltage – 2.3-V to 5.5-V Input Voltage Range – Very Low Dropout: 100mV (Max) at 50mA • Incorporates Shutdown Feature for the SIM Card Signals According to ISO-7816-3 • ESD Protection Exceeds JESD 22 – 2000-V Human-Body Model (A114-B) – 500-V Charged-Device Model (C101) – 8kV HBM for SIM Pins • Package – 16-Pin QFN (3 mm x 3 mm) – 12-Pin QFN (2mm x 1.7mm) DESCRIPTION The TXS4555 is a complete Smart Identity Module (SIM) card solution for interfacing wireless baseband processors with a SIM card to store I/O for mobile handset applications. The device complies with ISO/IEC Smart-Card Interface requirements as well as GSM and 3G mobile standards. It includes a highspeed level translator capable of supporting Class-B (2.95 V) and Class-C (1.8 V) interfaces, a lowdropout (LDO) voltage regulator that has output voltages that are selectable between 2.95-V Class-B and 1.8-V Class-C interfaces. RGT Package (Top View) 16 NC 15 I/O 14 RST 13 CLK EN 1 SEL 2 VCC 3 NC 4 Exposed Thermal Pad 12 NC 11 SIMCLK 10 GND 9 SIMRST VBATT 5 NC 6 VSIM 7 SIMI/O 8 Note: The Exposed center thermal pad must be connected to Ground RUT Package (Top View) 11 EN 10 I/O 9 RST 8 CLK 7 SIMCLK SEL 12 6 GND VCC 1 VBATT 2 VSIM 3 SIMI/O 4 SIMRST 5 The device has two supply voltage pins. VCC can be operated over the full range of 1.65 V to 3.3 V and VBATT from 2.3 to 5.5 V. VPWR is set to either 1.8 V or 2.95 V and is supplied by an internal LDO. The integrated LDO accepts input voltages as high as 5.5 V and outputs either 1.8 V or 2.95 V at 50 mA to the B-side circuitry and to the external SIM card. The TXS4555 enables system designers to easily interface low-voltage microprocessors to SIM cards operating at 1.8 V or 2.95 V. The TXS4555 also incorporates shutdown sequence for the SIM card pins based on the ISO 7816-3 specification for SIM cards. Proper shutdown of the SIM card signals helps in prevention of corruption of data during accidental shutdown of the phone. The device also has 8kV HBM protection for the SIM pins and standard 2kV HBM protection for all the other pins. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2011–2013, Texas Instruments Incorporated TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. Core Supply VCC (1.65 to 3.3 V) VBATT (2.3 to 5.5 V) Baseband Reset CLK I/O LDO Translator 2.95 V or 1.8 V, 50 mA Vcc RST CLK NC GND Vpp I/O NC Figure 1. Interfacing with SIM Card PIN NAME EN PIN NO. RGT RUT 1 11 SEL 2 12 Vcc 3 1 VBATT 5 2 VSIM 7 3 SIM_I/O 8 4 SIM_RST 9 5 GND 10 6 SIM_CLK 11 7 CLK 13 8 RST 14 9 I/O 15 10 NC 4, 6, 12, – 16 PIN FUNCTIONS TYPE (1) DESCRIPTION I Enable/disable control input. Pull EN low to place all outputs in Hi-Z state and to disable the LDO. Referenced to VCC. I Pin to program VSIM value (Low = 1.8V, High = 2.95V) P Power supply voltage which powers all A-port I/Os and control inputs P Battery power supply O SIM card Power-Supply pin (1.8V or 2.95V) I/O Bidirectional SIM I/O pin which connected to I/O pin of the SIM card connector O SIM Reset pin which connects to RESET pin of the SIM card connector G Ground O Clock signal pin which connects to CLK pin of the SIM card connector I Clock signal pin connected from baseband processor I SIM Reset pin connected from baseband processor I/O Bidirectional SIM I/O pin which connected from baseband processor NC No Connects (1) G = Ground, I = Input, O = Output, P = Power 2 Submit Documentation Feedback Product Folder Links: TXS4555 Copyright © 2011–2013, Texas Instruments Incorporated www.ti.com TXS4555 SBOS550B – FEBRUARY 2011 – REVISED AUGUST 2013 Figure 2. Block Diagram Cin = 1 mF.


TXS03121 TXS4555 TXS4558


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)