DatasheetsPDF.com

THS4513-SP Dataheets PDF



Part Number THS4513-SP
Manufacturers Texas Instruments
Logo Texas Instruments
Description FULLY-DIFFERENTIAL AMPLIFIER
Datasheet THS4513-SP DatasheetTHS4513-SP Datasheet (PDF)

THS4513-SP www.ti.com SLOS539A – SEPTEMBER 2007 – REVISED OCTOBER 2007 RAD-TOLERANT CLASS V, WIDEBAND, FULLY DIFFERENTIAL AMPLIFIER FEATURES 1 • Fully Differential Architecture • Centered Input Common-Mode Range • Minimum Gain of 2V/V (6 dB) • Bandwidth: 1100 MHz (Gain = 6 dB) • Slew Rate: 5100 V/μs • 1% Settling Time: 5.5 ns • HD2: –76 dBc at 70 MHz • HD3: –88 dBc at 70 MHz • OIP2: 84 dBm at 70 MHz • OIP3: 42 dBm at 70 MHz • Input Voltage Noise: 2.2 nV/√Hz (f >10 MHz) • Noise Figure: 19.8 d.

  THS4513-SP   THS4513-SP



Document
THS4513-SP www.ti.com SLOS539A – SEPTEMBER 2007 – REVISED OCTOBER 2007 RAD-TOLERANT CLASS V, WIDEBAND, FULLY DIFFERENTIAL AMPLIFIER FEATURES 1 • Fully Differential Architecture • Centered Input Common-Mode Range • Minimum Gain of 2V/V (6 dB) • Bandwidth: 1100 MHz (Gain = 6 dB) • Slew Rate: 5100 V/μs • 1% Settling Time: 5.5 ns • HD2: –76 dBc at 70 MHz • HD3: –88 dBc at 70 MHz • OIP2: 84 dBm at 70 MHz • OIP3: 42 dBm at 70 MHz • Input Voltage Noise: 2.2 nV/√Hz (f >10 MHz) • Noise Figure: 19.8 dB • Output Common-Mode Control • Power Supply: – Voltage: 3 V (±1.5 V) to 5 V (±2.5 V) – Current: 37.7 mA • Power-Down Capability: 0.65 mA • Rad-Tolerant: 150 kRad (Si) TID • QML-V Qualified, SMD 5962-07223 APPLICATIONS • 5 V Data-Acquisition Systems • High-Linearity ADC Amplifier • Wireless Communication • Medical Imaging • Test and Measurement RELATED PRODUCTS DEVICE THS4511-SP THS4513-SP MIN. GAIN COMMON-MODE RANGE OF INPUT(1) 6 dB –0.3 V to 2.3 V 6 dB 0.75 V to 4.25 V (1) Assumes a 5 V single-ended power supply. DESCRIPTION/ORDERING INFORMATION The THS4513 is a wideband, fully differential op amp designed for 3.3 V to 5 V data-acquisition systems. It has very low noise at 2.2 nV/√Hz, and extremely low harmonic distortion of –76 dBc HD2 and –88 dBc HD3 at 70 MHz with 2 Vpp output, G = 14 dB, and 100 Ω load. Slew rate is very high at 5100 V/μs and with settling time of 5.5 ns to 1% (2 V step), it is ideal for pulsed applications. It is suitable for minimum gain of 6 dB. To allow for dc coupling to ADCs, its unique output common-mode control circuit maintains the output common-mode voltage within 5 mV offset (typ) from the set voltage, when set within 0.5 V of mid-supply, with less than 4 mV differential offset voltage. The common-mode set point is set to mid-supply by internal circuitry, which may be over-driven from an external source. The input and output are optimized for best performance with their common-mode voltages set to mid-supply. Along with high performance at low power supply voltage, this makes for extremely high performance single supply 5 V data acquisition systems. The THS4513 is offered in a 16-pin ceramic flatpack package (W), and is characterized for operation over the full military temperature range from –55°C to 125°C. From VIN 50 W Source 49 .9 W 0.22 mF THS4513 + ADS5424 Circuit 100 W 348 W 69.8 W 0.22 mF 100 W 69.8 W 0.22 mF 5V THS4513 CM 225 W 225 W 2.7 pF 14 Bit, 105 MSPS A IN+ ADS 5424 A IN– VBG 49.9 W 348 W 0.1 mF 0.1 mF 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2007, Texas Instruments Incorporated THS4513-SP SLOS539A – SEPTEMBER 2007 – REVISED OCTOBER 2007 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGING/ORDERING INFORMATION(1) TEMPERATURE –55°C to 125°C PACKAGED DEVICES CERAMIC FLATPACK W (16)(2) SYMBOL 5962-0722301VFA 5962-0722301VFA (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI website at www.ti.com. (2) Package drawings, thermal data, and symbolization are available at www.ti.com/packaging. ABSOLUTE MAXIMUM RATINGS(1) over operating free-air temperature range (unless otherwise noted) VS– to VS+ VI VID IO TJ TA Tstg Supply voltage Input voltage Differential input voltage Output current Continuous power dissipation Maximum junction temperature Operating free-air temperature range Storage temperature range HBM ESD ratings CDM MM UNIT 6V ±VS 4V 200 mA See Dissipation Rating Table 150°C –55°C to 125°C –65°C to 150°C 2000 1500 100 (1) The absolute maximum ratings under any condition are limited by the constraints of the silicon process. Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied. DISSIPATION RATING TABLE PACKAGE W (16) θJC 14.7°C/W θJA 18.


THS4511-SP THS4513-SP THS4513


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)