2SK2928

2SK2928 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS(on) = 0.040 Ω typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G1042-0400 (Previous: ADE-208-551B) Rev.4.00 Sep 07, 2005 D 1. Gate 2. Drain (Flange) 3. Source S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2928 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Ta = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 60 ±20 15 60 15 15 19 40 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics Item Symbol Min Drain to source breakdown voltage V(BR)DSS 60 Gate to source breakdown voltage V(BR)GSS ±20 Zero gate voltage drain current IDSS — Gate to source leak current IGSS — Gate to source cutoff voltage VGS(off) 1.5 Static drain to source on state resistance RDS(on) — RDS(on) — Forward transfer admittance |yfs| 7 Input capacitance Ciss — Output capacitance Coss — Reverse transfer capacitance Crss — Turn-on delay time td(on) — Rise time tr — Turn-off delay time td(off) — Fall time tf — Body–drain diode forward voltage VDF...