2SK3148

2SK3148 Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance RDS =45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline REJ03G1073-0200 (Previous: ADE-208-748) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SK3148 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note3 EAR Note3 Pch Note2 Tch Tstg Ratings 100 ±20 20 80 20 20 40 30 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W °C °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 100 — — V ID = 10 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0 Zero gate voltage drain current IDSS — — 10 µA VDS = 100 V, VGS = 0 Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance VGS(off) 1.0 — 2.5 V ID = 1 mA, VDS = 10 V RDS(on) — 45 60 mΩ ID = 10 A, VGS = 10 VNo...