Silicon Schottkey Barrier Diode
Preliminary Datasheet
RKD706KV
R07DS0411EJ0100
Silicon Schottkey Barrier Diode for back flow protect
Rev.1.00 May 16...
Description
Preliminary Datasheet
RKD706KV
R07DS0411EJ0100
Silicon Schottkey Barrier Diode for back flow protect
Rev.1.00 May 16, 2011
Features
Low reverse current and suitable for high efficiency rectifying. Halogen free, environmental friendly package includes conformity to RoHS directive. Small Resin Package Flat lead type (SRP-F) is suitable for compact and high-density surface mount design.
Ordering Information
Part No RKD706KV P
Laser Mark S02
Package Name SRP-F
Package Code PWSF0002ZB-A
Taping Abbreviation (Quantity)
P (3,000 pcs / reel)
Pin Arrangement
Cathode mark Mark
1 S02 2
1. Cathode 2. Anode
R07DS0411EJ0100 Rev.1.00 May 16, 2011
Page 1 of 4
RKD706KV
Absolute Maximum Ratings
Item Reverse voltage Forward current Junction temperature Storage temperature
VR IF Tj Tstg
Symbol
Value 30 35 125
–55 to +125
Preliminary
(Ta = 25C)
Unit V mA C C
Electrical Characteristics
Item Reverse voltage Reverse current Forward voltage Capacitance ESD-Capability *
Symbol Min
Typ
VR
30
—
IR
—
—
VF
—
—
C
—
—
—
10
—
Note: 1. Failure criterion ; IR 20 nA at VR = 13 V
(Ta = 25C)
Max
Unit
Test Condition
—
V
IR = 10A
10
nA VR = 13V
0.70
V
IF = 10mA
1.2
pF VR = 0V, f = 1MHz
—
V C = 200pF, Both forward and reverse
direction 1 pulse.
R07DS0411EJ0100 Rev.1.00 May 16, 2011
Page 2 of 4
RKD706KV
Main Characteristics
10-2
10-3 10-4
Forward current IF (A)
10-5 10-6 10-7
10-8
10-9 0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward voltage VF (V)...
Similar Datasheet