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RKD706KV

Renesas

Silicon Schottkey Barrier Diode

Preliminary Datasheet RKD706KV R07DS0411EJ0100 Silicon Schottkey Barrier Diode for back flow protect Rev.1.00 May 16...


Renesas

RKD706KV

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Preliminary Datasheet RKD706KV R07DS0411EJ0100 Silicon Schottkey Barrier Diode for back flow protect Rev.1.00 May 16, 2011 Features  Low reverse current and suitable for high efficiency rectifying.  Halogen free, environmental friendly package includes conformity to RoHS directive.  Small Resin Package Flat lead type (SRP-F) is suitable for compact and high-density surface mount design. Ordering Information Part No RKD706KV P Laser Mark S02 Package Name SRP-F Package Code PWSF0002ZB-A Taping Abbreviation (Quantity) P (3,000 pcs / reel) Pin Arrangement Cathode mark Mark 1 S02 2 1. Cathode 2. Anode R07DS0411EJ0100 Rev.1.00 May 16, 2011 Page 1 of 4 RKD706KV Absolute Maximum Ratings Item Reverse voltage Forward current Junction temperature Storage temperature VR IF Tj Tstg Symbol Value 30 35 125 –55 to +125 Preliminary (Ta = 25C) Unit V mA C C Electrical Characteristics Item Reverse voltage Reverse current Forward voltage Capacitance ESD-Capability * Symbol Min Typ VR 30 — IR — — VF — — C — — — 10 — Note: 1. Failure criterion ; IR  20 nA at VR = 13 V (Ta = 25C) Max Unit Test Condition — V IR = 10A 10 nA VR = 13V 0.70 V IF = 10mA 1.2 pF VR = 0V, f = 1MHz — V C = 200pF, Both forward and reverse direction 1 pulse. R07DS0411EJ0100 Rev.1.00 May 16, 2011 Page 2 of 4 RKD706KV Main Characteristics 10-2 10-3 10-4 Forward current IF (A) 10-5 10-6 10-7 10-8 10-9 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward voltage VF (V)...




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