HSM2694

HSM2694 Silicon Epitaxial Planar Diode for Tuner Band Switch REJ03G0110-0200Z (Previous: ADE-208-095A) Rev.2.00 Oct.08.2003 Features Low forward resistance. (rf = 0.9 Ω max) Low capacitance. (C = 1.2 pF max) MPAK package is suitable for high density surface mounting and high speed assembly. Ordering Information Type No. HSM2694 Laser Mark B3 Package Code MPAK Pin Arrangement 3 2 1 (Top View) 1. Cathode 2. Cathode 3. Anode Rev.2.00, Oct.08.2003, page 1 of 4 HVM2694 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Reverse voltage Power dissipation VR Pd *1 Junction temperature Tj Storage temperature Tstg Operation temperature Topr Note: 1. Two device total Value Unit 35 V 150 mW 125 °C −45 to +125 °C −20 to +60 °C Electrical Characteristics *1 (Ta = 25°C) Item Symbol Min Typ Max Unit Test Condition Reverse voltage VR Reverse current I R Forward voltage VF Capacitance C Forward resistance r f Note: 1. Per one device 35 — — V IR = 10 µA — — 50 nA V = 25 V R — — 1.0 V IF = 10 mA — — 1.2 pF V = 6 V, f = 1 MHz R — — 0.9 Ω I = 2 mA, f = 100 MHz F Rev.2.00, Oct.08.2003, page 2 of 4 HVM2694 Main Characteristic 2.0 10 f = 100MHz 1.5 f = 1MHz Capacitance C (pF) Forward resistance rf (Ω) 1.0 1.0 0.5 100–4 10–3 10–2 Forward current IF (A) Fig.1 Forward resistance vs. Forward current IF = 2mA 10 0.1 1.0 10 40 Reverse voltage VR (V) Fig.2 Capacitance vs. Reverse voltage Forward resistance rf (Ω) 1.0 0.1 ...