N-CHANNEL POWER MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid)
PD-97911
IRHNJC9A7130 JANSR2N7648U3C
100V, N-CHAN...
Description
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) (Ceramic Lid)
PD-97911
IRHNJC9A7130 JANSR2N7648U3C
100V, N-CHANNEL
R 9 REF: MIL-PRF-19500/775 TECHNOLOGY
Product Summary
Part Number Radiation Level IRHNJC9A7130 100 kRads (Si)
IRHNJC9A3130 300 kRads (Si)
RDS(on) 34m 34m
ID QPL Part Number 35A JANSR2N7648U3C 35A JANSF2N7648U3C
SMD-0.5 (Ceramic Lid)
Description
IR HiRel R9 technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of low RDS(on) and faster switching times reduces the power losses and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic package Light Weight Surface Mount ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 12V, TC = 25°C ID2 @ VGS = 12V, TC = 100°C
IDM @TC = 25°C PD @TC = 25°C
VGS EAS IAR EAR dv/dt TJ TSTG
Continuous Drain Current
Continuous Drain Current Pulsed Drain C...
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