IRHNM57214SE

PD-97818C IRHNM57214SE RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.2) Product Summary Part Number Radiation Level RDS(on) ID IRHNM57214SE 100 kRads(Si) 1.7 2.4A Refer to page 9 for additional part number IRHNMC57214SE (Ceramic Lid) Description IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. 250V, N-CHANNEL R5 TECHNOLOGY SMD-0.2 (METAL LID) Features  Single Event Effect (SEE) Hardened  Low RDS(on)  Low Total Gate Charge  Simple Drive Requirements  Ease of Paralleling  Hermetically Sealed  Surface Mount  Ceramic Package  Light Weight  ESD Rating: Class 1B per MIL-STD-750, Method 1020 Absolute Maximum Ratings Parameter ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current IDM @TC = 25°C Pulsed Drain Current  PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy  IAR EAR dv/dt Avalanche Current  Repetitive Avalanche Energy  P...