N-CHANNEL POWER MOSFET
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary Part Number Radiation Level
IRHLNA770...
Description
RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-2)
Product Summary Part Number Radiation Level
IRHLNA77064 100 kRads(Si) IRHLNA73064 300 kRads(Si)
RDS(on)
0.012 0.012
ID
56A* 56A*
Description
IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
PD-97177D
IRHLNA77064 2N7604U2
60V, N-CHANNEL
R7 TECHNOLOGY
SMD-2
Features
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic package Light Weight Surface Mount ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM @TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear...
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