N-CHANNEL POWER MOSFET
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
PD-95816E
IRHNJ67130 JANSR2N7587U3
100V, N-CHANNEL
REF: MIL-PRF...
Description
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
PD-95816E
IRHNJ67130 JANSR2N7587U3
100V, N-CHANNEL
REF: MIL-PRF-19500/746
R6 TECHNOLOGY
Product Summary
Part Number Radiation Level IRHNJ67130 100 kRads(Si) IRHNJ63130 300 kRads(Si)
RDS(on) 0.042 0.042
ID 22A* 22A*
QPL Part Number JANSR2N7587U3 JANSF2N7587U3
SMD-0.5
Description
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.
Features
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Package Surface Mount ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
Parameter
ID1 @ VGS = 12V, TC = 25°C Continuous Drain Current
ID2 @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM @ TC = 25°C
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
VGS EAS IAR EAR dv/dt
Ga...
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