N-CHANNEL POWER MOSFET
PD-95813L
IRHLUB770Z4 JANSR2N7616UB
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (UB)
Product Summary
Part Number Ra...
Description
PD-95813L
IRHLUB770Z4 JANSR2N7616UB
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (UB)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLUB770Z4 100 kRads(Si)
0.68 0.8A
IRHLUB730Z4 300 kRads(Si)
0.68 0.8A
Refer to Page 10 for 3 Additional Part Numbers IRHLUBN770Z4, IRHLUBC770Z4, IRHLUBCN770Z4
QPL Part Number
JANSR2N7616UB JANSF2N7616UB
60V, N-CHANNEL
REF: MIL-PRF-19500/744
R7 TECHNOLOGY
UB (SHIELDED METAL LID)
Description
IR HiRel R7 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
Features
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Hermetically Sealed Ceramic Package Surface Mount Light Weight Complementary P-Channel Available-
IRHLUB7970Z4, IRHLUBN7970Z4 IRHLUBC7970Z4, IRHLUBCN7970Z4 ESD Rating: Class 0 per MIL-STD-7...
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