IRHMS593064

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low Ohmic - TO-254AA) PD-94713E IRHMS597064 JANSR2N7524T1 60V, P-CHANNEL REF: MIL-PRF-19500/733 R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHMS597064 100 kRads(Si) IRHMS593064 300 kRads(Si) RDS(on) 0.018 0.018 ID -45A* -45A* QPL Part Number JANSR2N7524T1 JANSF2N7524T1 TO-254AA Low Ohmic Description IRHMS597064 is a part of the International Rectifier HiRel family of products. IR HiRel R5 technology provides high performance power MOSFETs for space applications. These devices have been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DCDC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features  Single Event Effect (SEE) Hardened  Fast Switching  Low RDS(on)  Low Total Gate Charge  Simple Drive Requirements  Hermetically Sealed  Electrically Isolated  Light Weight  ESD Rating: Class 3A per MIL-STD-750, Method 1020 Absolute Maximum Ratings Symbol Parameter ID @ VGS = -12V, TC = 25°C Continuous Drain Current ID @ VGS = -12V, TC = 100°C Continuous Drain Current IDM @ TC = 25°C Pulsed Drain Current  PD @ TC = 25°C Maximum Power Dissipation Linear Dera...