40MT120UHA

Bulletin I27194 rev. A 01/06 "HALF-BRIDGE" IGBT MTP 40MT120UHA 40MT120UHTA UltraFast NPT IGBT Features UltraFast Non Punch Through (NPT) Technology Positive VCE(ON)Temperature Coefficient 10µs Short Circuit Capability HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery and Low VF Square RBSOA Al2O3 DBC Optional SMD Thermistor (NTC) Very Low Stray Inductance Design for High Speed Operation Benefits Optimized for Welding, UPS and SMPS Applications Rugged with UltraFast Performance Benchmark Efficiency above 20KHz Outstanding ZVS and Hard Switching Operation Low EMI, requires Less Snubbing Excellent Current Sharing in Parallel Operation Direct Mounting to Heatsink PCB Solderable Terminals Very Low Junction-to-Case Thermal Resis tance Absolute Maximum Ratings Parameters VCES IC I CM I LM IF I FM VGE VISOL PD Collector-to-Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current @ TC = 22°C @ TC = 104°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 105°C Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal to Case, t = 1 min Maximum Power Dissipation (only IGBT) @ TC = 25°C @ TC = 100°C VCES = 1200V IC = 80A MMTP Max 1200 80 40 160 160 21 160 ± 20 2500 463 185 Units V A V W www.irf.com 1 40MT120UHA, 40MT120UHTA Bulletin I27194 rev. A 01/06 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max ...