RBR1VWM30ATF

RBR1VW M30ATF Schottky Barrier Diode (AEC-Q101 qualified) Data sheet 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 30 V Io 1 A IFSM 30 A ●Features High reliability Small power mold type Low VF ●Inner Circuit 　　　 　 　 　 　 　 　 　 　 　　　 ●Application ●Packaging Specifications General rectification Packing Embossed Tape Reel Size(mm) 180 ●Structure Taping Width(mm) 8 Quantity(pcs) 3000 Silicon epitaxial planar Taping Code TR Marking 13 ●Absolute Maximum Ratings (Tc=25ºC unless otherwise specified) Parameter Symbol Conditions Limits Unit Repetitive peak reverse voltage Reverse voltage Average rectified forward current VRM Duty≦0.5 30 V VR Reverse direct voltage 30 V Glass epoxy mounted、 Io 60Hz half sin waveform、resistive load、 1 A Tc=125℃ Max. Peak forward surge current IFSM 60Hz half sin waveform、Non-repetitive、 one cycle、Ta=25℃ 30 A Junction temperature(1) Tj - Storage temperature Tstg - Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dPd/dTj<1/Rth(j-a). 150 ℃ -55 ～ 150 ℃ ●Characteristics (Tj=25ºC unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit Forward voltage Reverse current VF IF=1A - - 0.48 V IR VR=30V - - 50 μA Attention 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.rohm.com © 2020- ROHMCo., Ltd.All rights reserved. 1/5 　 2020/09/16_Rev.003 RBR1VWM30ATF ●Chara...