CSD18540Q5B

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18540Q5B SLPS488B – JUNE 2014 – REVISED APRIL 2017 CSD18540Q5B 60-V, N-Channel NexFET™ Power MOSFETs 1 Features 1 Ultra-Low Qg and Qgd Low-Thermal Resistance Avalanche Rated Lead-Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Isolated Converter Primary Side Switch Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 60 41 6.7 VGS = 4.5 V 2.6 VGS = 10 V 1.8 1.9 UNIT V nC nC mΩ V DEVICE CSD18540Q5B CSD18540Q5BT Device Information(1) QTY MEDIA PACKAGE 2500 13-Inch Reel SON 5.00-mm × 6.00-mm 250 7-Inch Reel Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 1.8-mΩ, 60-V NexFET™ power MOSFET is designed to minimize losses in power conversion applications with a SON 5-mm × 6-mm package. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 60 ±20 100 UNIT V V ID Continuous Drain Current (Silicon Limited), TC = 25°C 205 A Continuous Drain Current(1) 29 IDM Puls...