CSD18542KCS

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18542KCS 60 V N-Channel NexFET™ Power MOSFET CSD18542KCS SLPS557 – JUNE 2015 1 Features 1 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control 3 Description This 60 V, 3.3 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Drain (Pin 2) Gate (Pin 1) Source (Pin 3) Product Summary TA = 25°C VDS Drain-to-source voltage Qg Gate charge total (10 V) Qgd Gate charge gate-to-drain RDS(on) Drain-to-source on-resistance VGS(th) Threshold voltage TYPICAL VALUE 60 44 6.9 VGS = 4.5 V 4.0 VGS = 10 V 3.3 1.8 UNIT V nC nC mΩ mΩ V DEVICE CSD18542KCS Ordering Information(1) QTY MEDIA PACKAGE 50 Tube TO-220 Plastic Package SHIP Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain-to-source voltage VGS Gate-to-source voltage Continuous drain current (package limited) VALUE 60 ±20 200 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C 170 A Continuous drain current (silicon limited), TC = 100°C 120 IDM Pulsed drain current (1) 400 A PD Power dissipation 200 W TJ, Operating junction, Tstg Storage temperature –55 to 1...