CSD18501Q5A

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18501Q5A SLPS319C – JUNE 2012 – REVISED JANUARY 2015 CSD18501Q5A 40 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Battery Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (4.5 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 20 5.9 VGS = 4.5 V 3.3 VGS = 10 V 2.5 1.8 UNIT V nC nC mΩ mΩ V Ordering Information(1) Device Qty Media Package CSD18501Q5A 2500 13-Inch Reel SON 5 mm × 6 mm CSD18501Q5AT 250 7-Inch Reel Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 40 V, 2.5 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (1) IDM Pulsed Drain Current (2) Power Dissipation(1) PD Power Dissipation,...