CSD18504KCS

Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18504KCS SLPS365A – OCTOBER 2012 – REVISED FEBRUARY 2015 CSD18504KCS 40 V N-Channel NexFET™ Power MOSFET 1 Features 1 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free TO-220 Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control 3 Description This 40 V, 5.5 mΩ, TO-220 NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 19 3.5 VGS = 4.5 V 8.0 VGS = 10 V 5.5 1.9 UNIT V nC nC mΩ mΩ V Device CSD18504KCS Ordering Information(1) Package Media Qty Ship TO-220 Plastic Package Tube 50 Tube (1) For all available packages, see the orderable addendum at the end of the data sheet. Absolute Maximum Ratings TA = 25°C VDS Drain to Source Voltage VGS Gate to Source Voltage Continuous Drain Current (Package limited), TC = 25°C ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (Silicon limited), TC = 100°C IDM Pulsed Drain Current (1) PD Power Dissipation TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, single pulse ID = 42 A, L = 0.1 mH, RG ...