CSD18509Q5B

Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18509Q5B SLPS476A – JUNE 2014 – REVISED MAY 2017 CSD18509Q5B N-Channel NexFET™ Power MOSFETs 1 Features 1 Ultra-Low On Resistance Low Thermal Resistance Avalanche Rated Logic Level Pb Free Terminal Plating RoHS Compliant Halogen Free SON 5-mm × 6-mm Plastic Package 2 Applications DC-DC Conversion Secondary Side Synchronous Rectifier Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate to Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 150 17 VGS = 4.5 V 1.3 VGS = 10 V 1.0 1.8 UNIT V nC nC mΩ mΩ V Device CSD18509Q5B CSD18509Q5BT Ordering Information(1) Qty Media Package 2500 13-Inch Reel SON 5 × 6 mm 250 7-Inch Reel Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 40 V, 1 mΩ, SON 5 x 6 NexFET™ power MOSFET has been designed to minimize losses in power conversion applications. Top View S1 8D S2 7D S3 D G4 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) VALUE 40 ±20 100 UNIT V V ID Continuous Drain Current (Silicon limited), TC = 25°C 299 A Continuous Drain Current(1) 38 IDM Pulsed Drain Current, TA = 25°C(2) Power Dissipation(1) P...